外形图
| 封装版本 | 封装名称 | 封装说明 | 参考 | 发行日期 |
|---|---|---|---|---|
| SOT429-2 | TO-247-3L | Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L | 2022-02-08 |
相关文档
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| SOT429-2_TO-247-TL | Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L | Marcom graphics | 2023-11-15 |
| SOT429-2 | Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L | Package information | 2022-02-10 |
| SOT429-2_127 | TO-247-3L; Tube pack; Standard product orientation | Packing information | 2023-04-03 |
采用此封装的产品
IGBT discretes
| 型号 | 描述 | 快速访问 |
|---|---|---|
| NGW75T65H3DF | 650 V ,75 A high speed trench field-stop IGBT with full rated silicon diode | |
| NGW40T65M3DFP | 650 V, 40 A trench field-stop IGBT with full rated silicon diode | |
| NGW50T65H3DFP | 650 V, 50 A high speed trench field-stop IGBT with full rated silicon diode |
SiC MOSFETs
| 型号 | 描述 | 快速访问 |
|---|---|---|
| NSF030120L3A0 | 1200 V, 30 mΩ, N-channel SiC MOSFET | |
| NSF060120L3A0 | 1200 V, 60 mΩ, N-channel SiC MOSFET | |
| NSF080120L3A0 | 1200 V, 80 mΩ, N-channel SiC MOSFET | |
| NSF040120L3A0 | 1200 V, 40 mΩ, N-channel SiC MOSFET |