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Click here for more information74LVC30AD
8-input NAND gate
The 74LVC30A is an 8-input NAND gate.
Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices in a mixed 3.3 V and 5 V environment.
Schmitt trigger action at all inputs makes the circuit tolerant for slower input rise and fall time.
This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down.
Features and benefits
Wide supply voltage range from 1.2 V to 3.6 V
Inputs accept voltages up to 5.5 V
CMOS low power consumption
Direct interface with TTL levels
Complies with JEDEC standard:
JESD8-7A (1.65 V to 1.95 V)
JESD8-5A (2.3 V to 2.7 V)
JESD8-C/JESD36 (2.7 V to 3.6 V)
ESD protection:
HBM JEDEC JS-001-2012 exceeds 2000 V
MM JESD22-A115-C exceeds 200 V
CDM JESD22-C101F exceeds 1000 V
Specified from ‑40 °C to +85 °C and ‑40 °C to +125 °C
Applications
封装
下表中的所有产品型号均已停产 。
型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
---|---|---|---|---|---|---|---|
74LVC30AD | 74LVC30ADJ (935304016118) |
Obsolete | no package information |
支持
如果您需要设计/技术支持,请告知我们并填写 应答表 我们会尽快回复您。
模型
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
lvc30a | lvc30a IBIS model | IBIS model | 2018-11-29 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.