双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PTVS5V0Z1USKN

Transient voltage suppressor in DSN1608-2 for mobile applications

Unidirectional Transient Voltage Suppressor (TVS) in an ultra small leadless DSN1608-2 (SOD963) package, designed for transient overvoltage protection.

此产品已停产

Features and benefits

  • Rated peak pulse current: IPPM = 80 A (8/20 µs pulse)
  • Rated peak pulse power: PPPM = 1200 W (8/20 µs pulse)
  • Dynamic resistance Rdyn = 0.06 Ω
  • Reverse current: IRM = 0.025 µA
  • Very low package height: 0.25 mm

Applications

  • Power supply protection
  • Industrial application
  • Power management

参数类型

型号 Package name
PTVS5V0Z1USKN DSN1608-2

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
PTVS5V0Z1USKN PTVS5V0Z1USKNYL
(934069207315)		 Obsolete no package information

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
PTVS5V0Z1USKN PTVS5V0Z1USKNYL PTVS5V0Z1USKN rohs rhf rhf
品质及可靠性免责声明

文档 (2)

文件名称 标题 类型 日期
PTVS5V0Z1USKN Transient voltage suppressor in DSN1608-2 for mobile applications Data sheet 2017-05-04
PTVS5V0Z1USKN PTVS5V0Z1USKN SPICE Model SPICE model 2015-12-08

支持

如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
PTVS5V0Z1USKN PTVS5V0Z1USKN SPICE Model SPICE model 2015-12-08

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

交互式数据手册