双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

DC EV charging station

For electric vehicles to fully reach their potential, one of the biggest challenges is in providing fast charging infrastructure that help eliminate range anxiety. In DC EV charging stations (typically 22-350 kW), the power conversion from AC to DC happens within the station , and the current bypasses the OBC going directly to the battery. With increasing charger voltages up to 1000 V and 800 V batteries, charging times will be significantly reduced. Given the loading these fast-charging stations require, they tend to be seen as a transport infrastructure and not as residential solutions.

Block diagram

Highlighted components are Nexperia focus products

Products - AC/DC converter

Products - DC/DC converter

Products - Power management

Products - Signal processing and protection

Related systems

Design considerations

  • Topology selection is based on expected peformance, cost and footprint
  • Modular design provides flexibility and scalability, which has high requirements on thermal management.
  • Using power module instead of power discretes improves power density and system efficiency
    • 15-30 kW modules based on discretes
    • > 30 kW modules typically use IGBT or SiC power module​​​​​​s

MOSFET and GaN FET Handbook

Drawing on over 20 years’ of experience, the MOSFET and GaN FET Application Handbook: A Power Design Engineer’s Guide brings together a comprehensive set of learning and reference materials relating to the use of MOSFETs and GaN FETs in real world systems.

Download your copy today 

H-bridge motor controller design using Nexperia discrete semiconductors and logic ICs

The H-bridge circuit in this Technical Note is a full bridge DC-to-DC converter allowing operation of a brushed DC motor (48 V max, 12 V min, 5 A max). All electronic functions are designed with Nexperia discrete and logic IC components (low cost, no microcontroller or software needed). Read more >>