双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

650 V cascode GaN FETs

Performance, efficiency, reliability

The very high electron mobility of GaN enables the creation of devices with low on-resistance and exceptionally high switching frequency capability. These advantages are vital in next-generation power systems, such as industry 4.0 and renewable energy applications. Nexperia cascode GaN FETs are the enabler in these applications offering high power density, high performance, and high switching frequency. This unique solution facilitates the ease of driving the devices using well-known Si MOSFET gate drivers. Additionally, they deliver unmatched high junction temperature (Tj [max] 175 °C), ease of design freedom and improved reliability of power systems.

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650 V cascode GaN FETs
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Products

Type number Description Status Quick access
GAN111-650WSB 650 V, 97 mOhm Gallium Nitride (GaN) FET in a TO-247 package Production
GAN063-650WSA 650 V, 50 mΩ Gallium Nitride (GaN) FET NotForDesignIn
GAN039-650NBB 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package Production
GAN041-650WSB 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package Production
GAN039-650NTB 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package Production
Visit our documentation center for all documentation

Application note (6)

File name Title Type Date
AN90053.pdf Advanced SPICE models for Nexperia cascode Gallium Nitride (GaN) FETs Application note 2024-05-31
AN90030_translated.pdf ハーフブリッジ・トポロジーにおけるNexperia製GaN FETの並列 Application note 2023-04-03
AN90030.pdf Paralleling of Nexperia cascode GaN FETs in half-bridge topology Application note 2023-03-22
AN90005.pdf Understanding Power GaN FET data sheet parameters Application note 2020-06-08
AN90006.pdf Circuit design and PCB layout recommendations for GaN FET half bridges Application note 2019-11-15
AN90004.pdf Probing considerations for fast switching applications Application note 2019-11-15

Leaflet (4)

File name Title Type Date
nexperia_document_leaflet_GaNFETs_2024-CHN.pdf Power GaN FETs Chinese Leaflet 2024-07-31
nexperia_document_leaflet_GaNFETs_2024.pdf Power GaN FETs Leaflet 2024-07-24
nexperia_document_leaflet_GaN_CCPAK_2023_CHN.pdf CCPAK GaN FETs Chinese Leaflet 2023-10-25
nexperia_document_leaflet_GaN_CCPAK_2023.pdf CCPAK GaN FETs Leaflet 2023-10-25

Marcom graphics (1)

File name Title Type Date
CCPAK1212_SOT8000-Combi_mk.png Plastic, surface mounted copper clip package (CCPAK1212); 13 terminals; 2.0 mm pitch, 12 mm x 12 mm x 2.5 mm body Marcom graphics 2023-04-20

Technical note (1)

File name Title Type Date
TN90004.pdf An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability Technical note 2020-07-21

User manual (1)

File name Title Type Date
Nexperia_document_book_MOSFETGaNFETApplicationHandbook_2020.pdf MOSFET & GaN FET Application Handbook User manual 2020-11-05

White paper (3)

File name Title Type Date
nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese.pdf Whitepaper: GaN need for efficient conversion (Japanese) White paper 2021-05-20
nexperia_whitepaper_gan_need_for_efficient_conversion_CHN.pdf 白皮书: 功率GaN技术: 高效功率转换的需求 White paper 2020-08-17
nexperia_whitepaper_gan_need_for_efficient_conversion.pdf White paper: Power GaN technology: the need for efficient power conversion White paper 2020-07-23

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