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BCP56H
NPN medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic...
Price $ 0.31
NCR320U
LED driver consisting of a resistor-equipped NPN transistor with two diodes on one chip in an SOT4...
Price $ 0.38
BCP53H
PNP medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic...
Price $ 0.16
BCP53T-SERIES
PNP medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic...
Price $ 0.26
BCP56T-SERIES
NPN medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic...
Price $ 0.27
PNS40010ER
High power density, standard switching time recovery rectifier with high-efficiency planar technol...
Price $ 0.28
Displayed price per unit is based on small quantity orders
双极性晶体管
Back to topMJD45H11
80 V, 8 A PNP high power bipolar transistorPNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD44H11
$ 0.69 *
Features and benefits
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High thermal power dissipation capability
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High energy efficiency due to less heat generation
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Electrically similar to popular MJD45H series
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Low collector emitter saturation voltage
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Fast switching speeds
Price
- $ 0.69
MJD32C
100 V, 3 A PNP high power bipolar transistorMJD44H11A
80 V, 8 A NPN high power bipolar transistorMJD31CA
100 V, 3 A NPN high power bipolar transistorNCR420Z
150 mA LED driver in SOT223NCR421Z
150 mA LED driver in SOT223NCR421PAS
150 mA LED driver in DFN2020D-6NCR321PAS
250 mA LED driver in DFN2020D-6二极管
Back to topPMEG060T050ELPE
60 V, 5 A low leakage current Trench Schottky...PMEG050T150EIPD
50 V, 15 A low VF Trench Schottky barrier...PNE20030EP
200 V, 3 A hyperfast recovery rectifierPNE20010ER
200 V, 1 A hyperfast recovery rectifierBAS16TH
High-speed switching diodeBAS21TH
High-voltage switching diodeESD保护、TVS、滤波和信号调节ESD保护
Back to topPESD2CANFD24V-T
ESD protection for In-vehicle networksESD protection device in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed to protect two automotive In-vehicle network bus lines from the damage caused by ElectroStatic discharge (ESD) and other transients.
$ 0.30 *
Features and benefits
- Reverse stand-off voltage: VRWM = 24 V
- Low clamping voltage: VCL= 33 V at IPP = 1 A
- High temperature capability: Tj = 175 °C
- AEC-Q101 qualified
Price
- $ 0.30
PESD2V8R1BSF
Ultra low capacitance bidirectional ESD...PESDxUSB3B
ESD protection for differential data linesPESD2ETH1G-T
Extremely low clamping low capacitance...PUSB3BB2DF
Extremely low clamping low capacitance ESD protectionPESD3V3T1BL
Bidirectional ESD protection diodePCMFXHDMI2BA-C Series
Common-mode EMI filter for differential channels...PTVSxP1UTP series
High-temperature 600 W Transient Voltage SuppressorMOSFET
Back to topBUK7S0R7-40H
N-channel 40 V, 0.7 mΩ standard level MOSFET in LFPAK88Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a copper-clip LFPAK88 package. Fully designed and qualified to meet beyond AEC-Q101 requirements.
$ 2.71 *
Features and benefits
- Fully automotive qualified to beyond AEC-Q101
- -55 °C to +175 °C suitable for thermally demanding environments
- LFPAK copper clip technology & Gull Wing leads
- Unique 40 V Trench 9 superjunction technology
Price
- $ 2.71
BUK9K13-60RA
Dual N-channel 60 V, 12.5 mOhm logic level MOSFET...BUK7S0R7-40H
N-channel 40 V, 0.7 mΩ standard level MOSFET in LFPAK88PSMNR51-25YLH
N-channel 25 V, 0.57 mΩ, 380 A logic level MOSFET...BUK7V4R2-40H
Dual N-channel 40 V, 4.2 mOhm standard level MOSFET...PSMNR70-30YLH
N-channel 30 V, 0.82 mΩ, 300 A logic level MOSFET in...PMH260UNE
20 V, N-channel Trench MOSFETBUK6D22-30E
30 V, N-channel Trench MOSFET氮化镓场效应晶体管(GaN FET)
Back to topGAN063-650WSA
650 V, 50 mΩ Gallium Nitride (GaN) FETThe GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET. It is a normally-off device that combines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies — offering superior reliability and performance. Not recommended for new designs (NRND).
$ 19.43 *
Features and benefits
- Ultra-low reverse recovery charge
- Simple gate drive (0 V to +10 V or 12 V)
- Robust gate oxide (±20 V capability)
- Very good gate bounce immunity
Price
- $ 19.43
GAN041-650WSB
650 V, 35 mΩ Gallium Nitride (GaN) FET in a...模拟和逻辑IC
Back to top74AVC8T245BQ
8-bit dual supply translating transceiver with configurable voltage translation; 3-stateThe 74AVC8T245 is an 8-bit, dual supply transceiver that enables bidirectional level translation. It features two 8-bit input-output ports (An and Bn), a direction control input (DIR), a output enable input (OE) and dual supply pins (VCC(A) and VCC(B)).
$ 1.19 *
Features and benefits
- Wide supply voltage range
- Complies with JEDEC standards
- ESD protection
- Multiple package options
- Specified from -40°C to +85°C and -40°C to +125°C
Price
- $ 1.19
LSF0102DC
2-bit bidirectional multi-voltage level translator...NXS0104PW-Q100
Dual supply translating transceiver...NXB0104BQ
Dual supply translating transceiver...74LV1T08GW
2-input single supply translating AND gate74AUP1G17GX4
Low-power Schmitt trigger74LVC1G14GX4
Single Schmitt-trigger inverter74HC4053PW
Triple 2-channel analog multiplexer/ demultiplexerDownload the Nexperia Selection Guide
Download now* Displayed price per unit is based on small quantity orders