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NCR320U
LED driver consisting of a resistor-equipped NPN transistor with two diodes on one chip in an SOT457...
Price $ 0.33
NCR320UX
250 mA LED driver in SOT457
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PNS40010ER
High power density, standard switching time recovery rectifier with high-efficiency planar technolog...
Price
PNS40010ER
400 V, 1 A high power density, standard switching time recovery rectifier
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Displayed price per unit is based on small quantity orders
双极性晶体管
Back to topMJD45H11
80 V, 8 A PNP high power bipolar transistorPNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD44H11
$ 0.69 *
Features and benefits
Features and benefits
High thermal power dissipation capability
High energy efficiency due to less heat generation
Electrically similar to popular MJD45H series
Low collector emitter saturation voltage
Fast switching speeds
Price
- $ 0.69
MJD45H11J
80 V, 8 A PNP high power bipolar transistor
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MJD32C
100 V, 3 A PNP high power bipolar transistorMJD44H11A
80 V, 8 A NPN high power bipolar transistorMJD31CA
100 V, 3 A NPN high power bipolar transistorNCR420Z
150 mA LED driver in SOT223NCR421Z
150 mA LED driver in SOT223NCR421PAS
150 mA LED driver in DFN2020D-6NCR321PAS
250 mA LED driver in DFN2020D-6二极管
Back to topPMEG060T050ELPE
60 V, 5 A low leakage current Trench Schottky...PMEG050T150EIPD
50 V, 15 A low VF Trench Schottky barrier...PNE20030EP
200 V, 3 A hyperfast recovery rectifierPNE20010ER
200 V, 1 A hyperfast recovery rectifierBAS16TH
High-speed switching diodeBAS21TH
High-voltage switching diodeESD保护、TVS、滤波和信号调节ESD保护
Back to topPESD2CANFD24V-T
ESD protection for In-vehicle networksESD protection device in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed to protect two automotive In-vehicle network bus lines from the damage caused by ElectroStatic discharge (ESD) and other transients.
$ 0.30 *
Features and benefits
- Reverse stand-off voltage: VRWM = 24 V
- Low clamping voltage: VCL= 33 V at IPP = 1 A
- High temperature capability: Tj = 175 °C
- AEC-Q101 qualified
Price
- $ 0.30
PESD2CANFD24V-TR
ESD protection for In-vehicle networks
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PESD2V8R1BSF
Ultra low capacitance bidirectional ESD...PESD2ETH1G-T
Extremely low clamping low capacitance...PUSB3BB2DF
Extremely low clamping low capacitance ESD protectionPESD3V3T1BL
Bidirectional ESD protection diodeMOSFET
Back to topBUK7S0R7-40H
N-channel 40 V, 0.7 mΩ standard level MOSFET in LFPAK88Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a copper-clip LFPAK88 package. Fully designed and qualified to meet beyond AEC-Q101 requirements.
$ 2.79 *
Features and benefits
- Fully automotive qualified to beyond AEC-Q101
- -55 °C to +175 °C suitable for thermally demanding environments
- LFPAK copper clip technology & Gull Wing leads
- Unique 40 V Trench 9 superjunction technology
Price
- $ 2.79
BUK7S0R7-40HJ
N-channel 40 V, 0.7 mΩ standard level MOSFET in LFPAK88
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BUK9K13-60RA
Dual N-channel 60 V, 12.5 mOhm logic level MOSFET...BUK7S0R7-40H
N-channel 40 V, 0.7 mΩ standard level MOSFET in LFPAK88PSMNR51-25YLH
N-channel 25 V, 0.57 mΩ, 380 A logic level MOSFET...BUK7V4R2-40H
Dual N-channel 40 V, 4.2 mOhm standard level MOSFET...PSMNR70-30YLH
N-channel 30 V, 0.82 mΩ, 300 A logic level MOSFET in...PMH260UNE
20 V, N-channel Trench MOSFETBUK6D22-30E
30 V, N-channel Trench MOSFET氮化镓场效应晶体管(GaN FET)
Back to topGAN063-650WSA
650 V, 50 mΩ Gallium Nitride (GaN) FETThe GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET. It is a normally-off device that combines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies — offering superior reliability and performance.
$ 19.43 *
Features and benefits
- Ultra-low reverse recovery charge
- Simple gate drive (0 V to +10 V or 12 V)
- Robust gate oxide (±20 V capability)
- Very good gate bounce immunity
Price
- $ 19.43
GAN063-650WSAQ
650 V, 50 mΩ Gallium Nitride (GaN) FET
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GAN041-650WSB
650 V, 35 mΩ Gallium Nitride (GaN) FET in a...模拟和逻辑IC
Back to top74AVC8T245BQ
8-bit dual supply translating transceiver with configurable voltage translation; 3-stateThe 74AVC8T245 is an 8-bit, dual supply transceiver that enables bidirectional level translation. It features two 8-bit input-output ports (An and Bn), a direction control input (DIR), a output enable input (OE) and dual supply pins (VCC(A) and VCC(B)).
$ 1.06 *
Features and benefits
- Wide supply voltage range
- Complies with JEDEC standards
- ESD protection
- Multiple package options
- Specified from -40°C to +85°C and -40°C to +125°C
Price
- $ 1.06
74AVC8T245BQ,118
8-bit dual supply translating transceiver with configurable voltage translation; 3-state
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LSF0102DC
2-bit bidirectional multi-voltage level translator...NXS0104PW-Q100
Dual supply translating transceiver...NXB0104BQ
Dual supply translating transceiver...74LV1T08GW
2-input single supply translating AND gate74AUP1G17GX4
Low-power Schmitt trigger74LVC1G14GX4
Single Schmitt-trigger inverter74HC4053PW
Triple 2-channel analog multiplexer/ demultiplexerDownload the Nexperia Selection Guide
Download now* Displayed price per unit is based on small quantity orders