双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

DC/DC Flyback

Similar to booster converters in architecture and performance the simple flyback converter topology uses a mutually coupled inductor to store energy when current passes through and releasing the energy when the power is removed. However, the primary winding of the transformer replaces the inductor while the secondary provides the output. In the flyback configuration, the primary and secondary windings are utilized as two separate inductors.

Block diagram

Products - Power

设计考虑因素

  • 开始采用PWM驱动无刷直流电机控制
  • 电机驱动MOSFET必须以低RDSon和良好的热阻抗来满足峰值高电流需求
  • 如果过载情况会降低电池和栅极电压，则可能需要具有强线性模式性能的MOSFET来提供反向电池保护
  • MOSFET可能需要满足UL2595等的具体间距要求
  • 为小尺寸优化的电荷平衡MOSFET，通常装在可移动电池组中——每个电池一个

MOSFET and GaN FET Handbook

Drawing on over 20 years’ of experience, the MOSFET and GaN FET Application Handbook: A Power Design Engineer’s Guide brings together a comprehensive set of learning and reference materials relating to the use of MOSFETs and GaN FETs in real world systems.

Download your copy today 

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