双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

Power Factor Corrector (PFC) totem pole

The continued rise in demand for higher power density and ever more efficient power conversion had driven the continued innovation in wide-bandgap (WBG) semiconductor technology. WBG diodes and transistors have enabled totem-pole bridgeless power factor correction to become the dominant solution for many applications, in particular energy storage systems (ESS), electric vehicle charging and uninterruptable power supplies (UPS). This topology can also offer bidirectional operation, enabling power to be transmitted to and from the grid without affecting efficiency.

Block diagram

Products - Power

设计考虑因素

  • 开始采用PWM驱动无刷直流电机控制
  • 电机驱动MOSFET必须以低RDSon和良好的热阻抗来满足峰值高电流需求
  • 如果过载情况会降低电池和栅极电压，则可能需要具有强线性模式性能的MOSFET来提供反向电池保护
  • MOSFET可能需要满足UL2595等的具体间距要求
  • 为小尺寸优化的电荷平衡MOSFET，通常装在可移动电池组中——每个电池一个

UM90003: 4 kW Bridgeless Totem-pole PFC evaluation board

The NXTTP4000W066 evaluation board is a bridgeless totem-pole Power-Factor-Correction (PFC) circuit. Using Nexperia power GaN FETs a very high-efficiency single-phase AC-DC converter is realized by using a diode-free power GaN FET bridge.

Read the User Manual

MOSFET and GaN FET Handbook

Drawing on over 20 years’ of experience, the MOSFET and GaN FET Application Handbook: A Power Design Engineer’s Guide brings together a comprehensive set of learning and reference materials relating to the use of MOSFETs and GaN FETs in real world systems.

Download your copy today 

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