双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

N沟道MOSFET低VCEsat(BISS)PNP晶体管组合

具备组合优势的二合一解决方案

您的设计能否受益于MOSFET双极性晶体管组合?这些器件将PNP突破性小信号(BISS)晶体管与N沟道MOSFET相结合,提供大量性能和设计优势,包括高效率、器件数减少并节省成本和电路板空间。

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Low VCEsat (BISS) transistors PNP - N-channel MOSFET combination
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Products

Type number Description Status Quick access
PBSM5240PFH 40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET Production
PBSM5240PF 40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET EndOfLife
Visit our documentation center for all documentation

Marcom graphics (1)

File name Title Type Date
DFN2020-6_SOT1118_mk.png plastic, thermal enhanced ultra thin small outline package; no leads; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body Marcom graphics 2017-01-28

Selection guide (1)

File name Title Type Date
Nexperia_Selection_guide_2023.pdf Nexperia Selection Guide 2023 Selection guide 2023-05-10

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