用于热插拔和软启动的ASFET专为支持始终开机的应用和设备而设计:
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用于通信基础设施的热插拔 |
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Products
Type number | Description | Status | Quick access |
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PSMN2R9-100SSE | N-channel 100 V, 2.9 mOhm MOSFET with enhanced SOA in LFPAK88 | Production | |
PSMN2R0-30YLE | N-channel 30 V 2 mΩ logic level MOSFET in LFPAK | Production | |
PSMN013-100YSE | N-channel 100 V 13 mΩ standard level MOSFET in LFPAK56 | Production | |
PSMN3R4-30BLE | N-channel 30 V, 3.4 mΩ logic level MOSFET in D2PAK | Production | |
PSMN4R8-100YSE | N-channel 100 V, 4.8 mOhm MOSFET with enhanced SOA in LFPAK56E | Production | |
PSMN4R8-100PSE | N-channel 100 V 5 mΩ standard level MOSFET with improved SOA in TO220 package | EndOfLife | |
PSMN4R8-100BSE | N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK | Production | |
PSMN8R9-100BSE | N-channel 100 V, 10 mOhm, standard level MOSFET in D2PAK | Production | |
PSMN2R3-100SSE | N-channel 100 V, 2.3 mOhm MOSFET with enhanced SOA in LFPAK88 | Production | |
PSMN7R8-100PSE | N-channel 100 V 7.8 mΩ standard level MOSFET with improved SOA in TO220 package | EndOfLife | |
PSMN7R6-100BSE | N-channel 100 V 7.6 mΩ standard level MOSFET in D2PAK | Production | |
PSMN4R2-80YSE | N-channel 80 V, 4.2 mOhm MOSFET with enhanced SOA in LFPAK56E | Production | |
PSMNR67-30YLE | N-channel 30 V, 0.70 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56E | Production | |
PSMNR89-25YLE | N-channel 25 V, 0.98 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 | Production | |
PSMN1R5-30BLE | N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK | Production | |
PSMNR82-30YLE | N-channel 30 V, 0.87 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 | Production | |
PSMN1R1-30YLE | N-channel 30 V, 1.3 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 | Production | |
PSMN1R0-30YLE | N-channel 30 V, 1.1 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 | Production | |
PSMN3R7-100BSE | N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK | Production | |
PSMN1R1-100CSE | N-channel, 100 V, 1.09 mOhm, MOSFET with enhanced SOA in CCPAK1212i package | Qualification | |
PSMNR56-25YLE | N-channel 25 V, 0.63 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56E | Production | |
PSMN2R5-80SSE | N-channel 80 V, 2.5 mOhm MOSFET with enhanced SOA in LFPAK88 | Production | |
PSMN1R6-25YLE | N-channel 25 V, 1.9 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 | Production | |
PSMN2R1-30YLE | N-channel 30 V, 2.2 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 | Production | |
PSMNR98-25YLE | N-channel 25 V, 1.1 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 | Production | |
PSMNR90-80ASE | N-channel, 80 V, 0.9 mOhm, MOSFET with enhanced SOA in CCPAK1212 package | Qualification | |
PSMN1R0-100ASE | N-channel, 100 V, 1.04 mOhm, MOSFET with enhanced SOA in CCPAK1212 package | Qualification | |
PSMN1R0-80CSE | N-channel, 80 V, 0.95 mOhm, MOSFET with enhanced SOA in CCPAK1212i package | Qualification | |
PSMN1R2-80CSE | N-channel, 80 V, 1.18 mOhm, MOSFET with enhanced SOA in CCPAK1212i package | Qualification | |
PSMN1R4-100CSE | N-channel, 100 V, 1.42 mOhm, MOSFET with enhanced SOA in CCPAK1212i package | Production | |
PSMN1R2-80ASE | N-channel, 80 V, 1.18 mOhm, MOSFET with enhanced SOA in CCPAK1212 package | Production | |
PSMN1R4-100ASE | N-channel, 100 V, 1.36 mOhm, MOSFET with enhanced SOA in CCPAK1212 package | Production |
Application note (2) |
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File name | Title | Type | Date |
AN50006.pdf | Power MOSFETs in linear mode | Application note | 2022-04-12 |
AN90016.pdf | Maximum continuous currents in NEXPERIA LFPAK power MOSFETs | Application note | 2020-09-03 |
Leaflet (2) |
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File name | Title | Type | Date |
nexperia_document_leaflet_LFPAK88_2022_CHN.pdf | LFPAK88 将功率密度提升到新高度 | Leaflet | 2022-03-10 |
nexperia_document_leaflet_LFPAK88_2022.pdf | LFPAK88 - Driving power-density to the next level | Leaflet | 2022-03-09 |
Selection guide (1) |
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File name | Title | Type | Date |
Nexperia_Selection_guide_2023.pdf | Nexperia Selection Guide 2023 | Selection guide | 2023-05-10 |
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