双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

2N7002BKM

60 V N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Not recommended for new designs (NRND).

Alternatives

Features and benefits

  • Logic-level compatible
  • Very fast switching
  • Trench MOSFET technology
  • ESD protection up to 2 kV

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits

Parametrics

Type number Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) RDSon [max] @ VGS = 5 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
2N7002BKM
SOT883 DFN1006-3 Not for design in N 1 60 1600 2000 150 0.45 0.4 1.2 0.715 1.6 N 41 4 2011-01-24

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
2N7002BKM
2N7002BKM,315
(934064287315)		 Withdrawn / End-of-life Z8 SOT883
DFN1006-3
(SOT883) 		SOT883 REFLOW_BG-BD-1
SOT883_315

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
2N7002BKM
2N7002BKM,315 2N7002BKM rohs rhf rhf
Quality and reliability disclaimer

Documentation (16)

File name Title Type Date
2N7002BKM 60 V, 450 mA N-channel Trench MOSFET Data sheet 2017-06-02
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
SOT883 3D model for products with SOT883 package Design support 2020-01-22
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
DFN1006-3_SOT883_mk plastic, leadless ultra small package; 3 terminals; 0.65 mm pitch; 1 mm x 0.6 mm x 0.48 mm body Marcom graphics 2017-01-28
SOT883 plastic, leadless ultra small package; 3 terminals; 0.35 mm pitch; 1 mm x 0.6 mm x 0.48 mm body Package information 2022-05-20
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
2N7002BKM_8_18_2010 2N7002BKM_8_18_2010 Spice parameter SPICE model 2011-08-22
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09

Support

If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.

Models

File name Title Type Date
2N7002BKM_8_18_2010 2N7002BKM_8_18_2010 Spice parameter SPICE model 2011-08-22
SOT883 3D model for products with SOT883 package Design support 2020-01-22

Ordering, pricing & availability

Type number Orderable part number Ordering code (12NC) Status Packing Packing Quantity Buy online

Sample

As a Nexperia customer you can order samples via our sales organization.

If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples. Check out the list of official distributors.

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet