双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

74ABT04DB

Hex inverter

The 74ABT04 is a hex inverter. This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.

This product has been discontinued

Features and benefits

  • Supply voltage range from 4.5 V to 5.5 V

  • BiCMOS high speed and output drive

  • Direct interface with TTL levels

  • IOFF circuitry provides partial Power-down mode operation

  • Latch-up protection exceeds 500 mA per JESD78B class II level A

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Specified from -40 °C to +85 °C

PCB Symbol, Footprint and 3D Model

Model Name Description

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
74ABT04DB 74ABT04DB,112
(935207000112)
Obsolete no package information
74ABT04DB,118
(935207000118)
Obsolete

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
74ABT04DB 74ABT04DB,112 74ABT04DB rohs rhf rhf
74ABT04DB 74ABT04DB,118 74ABT04DB rohs rhf rhf
Quality and reliability disclaimer

Documentation (3)

File name Title Type Date
74ABT04 Hex inverter Data sheet 2024-01-18
abt04 abt04 IBIS model IBIS model 2013-04-08
abt abt Spice model SPICE model 2013-05-07

Support

If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.

Models

File name Title Type Date
abt04 abt04 IBIS model IBIS model 2013-04-08
abt abt Spice model SPICE model 2013-05-07

PCB Symbol, Footprint and 3D Model

Model Name Description

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.