双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

74ABT20DB

Dual 4-input NAND gate

The 74ABT20 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive.

The 74ABT20 is a dual 4-input NAND gate.

This product has been discontinued

Features and benefits

  • Latch-up protection exceeds 500 mA per JESD78B class II level A
  • ESD protection:
    • HBM JESD22-A114F exceeds 2000 V
    • MM JESD22-A115-A exceeds 200 V
  • Multiple package options
  • Specified from -40 °C to +85 °C

Applications

PCB Symbol, Footprint and 3D Model

Model Name Description

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
74ABT20DB 74ABT20DB,112
(935208670112)
Obsolete no package information
74ABT20DB,118
(935208670118)
Obsolete

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
74ABT20DB 74ABT20DB,112 74ABT20DB rohs rhf rhf
74ABT20DB 74ABT20DB,118 74ABT20DB rohs rhf rhf
Quality and reliability disclaimer

Documentation (3)

File name Title Type Date
74ABT20 Dual 4-input NAND gate Data sheet 2017-03-17
abt20 abt20 IBIS model IBIS model 2013-04-08
abt abt Spice model SPICE model 2013-05-07

Support

If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.

Models

File name Title Type Date
abt20 abt20 IBIS model IBIS model 2013-04-08
abt abt Spice model SPICE model 2013-05-07

PCB Symbol, Footprint and 3D Model

Model Name Description

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.