双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

74AXP1T57GN

Dual supply configurable multiple function gate

The 74AXP1T57 is a dual supply configurable multiple function gate with Schmitt-trigger inputs. It features three inputs (A, B and C), an output (Y) and dual supply pins (VCCI and VCCO). The inputs are referenced to VCCI and the output is referenced to VCCO. All inputs can be connected directly to VCCI or GND. VCCI can be supplied at any voltage between 0.7 V and 2.75 V and VCCO can be supplied at any voltage between 1.2 V and 5.5 V. This feature allows voltage level translation. The 74AXP1T57 can be configured as any of the following logic functions AND, OR, NAND, NOR, XNOR, inverter and buffer.

This device ensures very low static and dynamic power consumption across the entire supply range and is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.

This product has been discontinued

Features and benefits

  • Wide supply voltage range:

    • VCCI: 0.7 V to 2.75 V

    • VCCO: 1.2 V to 5.5 V

  • Low input capacitance; CI = 0.6 pF (typical)

  • Low output capacitance; CO = 1.8 pF (typical)

  • Low dynamic power consumption; CPD = 0.6 pF at VCCI = 1.2 V (typical)

  • Low dynamic power consumption; CPD = 7.1 pF at VCCO = 3.3 V (typical)

  • Low static power consumption; ICCI = 0.5 µA (85 °C maximum)

  • Low static power consumption; ICCO = 1.8 µA (85 °C maximum)

  • High noise immunity

  • Complies with JEDEC standard:

    • JESD8-12A.01 (1.1 V to 1.3 V; A, B, C inputs)

    • JESD8-11A.01 (1.4 V to 1.6 V)

    • JESD8-7A (1.65 V to 1.95 V)

    • JESD8-5A.01 (2.3 V to 2.7 V)

    • JESD8-C (2.7 V to 3.6 V; Y output)

    • JESD12-6 (4.5 V to 5.5 V; Y output)

  • ESD protection:

    • HBM ANSI/ESDA/JEDEC JS-001 Class 2 exceeds 2 kV

    • CDM JESD22-C101E exceeds 1 kV

  • Latch-up performance exceeds 100 mA per JESD78D Class II

  • Inputs accept voltages up to 2.75 V

  • Low noise overshoot and undershoot < 10% of VCCO

  • IOFF circuitry provides partial power-down mode operation

  • Multiple package options

  • Specified from -40 °C to +85 °C and from -40 °C to +125 °C

Parametrics

Type number VCC(A) (V) VCC(B) (V) Logic switching levels Output drive capability (mA) tpd (ns) Nr of bits Power dissipation considerations Tamb (°C)
74AXP1T57GN 0.7 - 2.75 1.2 - 5.5 CMOS ± 12 4.8 1 ultra low -40~85

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
74AXP1T57GN 74AXP1T57GNX
(935305666115)		 Obsolete no package information

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
74AXP1T57GN 74AXP1T57GNX 74AXP1T57GN rohs rhf rhf
Quality and reliability disclaimer

Series

Documentation (6)

File name Title Type Date
74AXP1T57 Dual supply configurable multiple function gate Data sheet 2022-06-17
AN90029 Pin FMEA for AXPnT family Application note 2021-07-13
Nexperia_document_guide_Logic_translators Nexperia Logic Translators Brochure 2021-04-12
axp1t57 74AXP1T57 IBIS model IBIS model 2016-03-01
Nexperia_document_leaflet_Logic_AXP_technology_portfolio_201904 AXP – Extremely low-power logic technology portfolio Leaflet 2019-04-05
74AXP1T57GN_Nexperia_Product_Reliability 74AXP1T57GN Nexperia Product Reliability Quality document 2022-05-04

Support

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Models

File name Title Type Date
axp1t57 74AXP1T57 IBIS model IBIS model 2016-03-01

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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet