双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

74HC2G08GD

Dual 2-input AND gate

The 74HC2G08; 74HCT2G08 is a dual 2-input AND gate. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC.

This product has been discontinued

Alternatives

Features and benefits

  • Wide supply voltage range from 2.0 V to 6.0 V

  • Input levels:

    • For 74HC2G08: CMOS level

    • For 74HCT2G08: TTL level

  • CMOS low power dissipation

  • High noise immunity

  • Latch-up performance exceeds 100 mA per JESD 78 Class II Level B

  • Complies with JEDEC standard: JESD7A (2.0 V to 6.0 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

Documentation (4)

File name Title Type Date
74HC_HCT2G08 Dual 2-input AND gate Data sheet 2023-11-15
AN10161 PicoGate Logic footprints Application note 2002-10-29
AN11044 Pin FMEA 74HC/74HCT family Application note 2019-01-09
hc2g08 74HC2G08 IBIS model IBIS model 2019-03-13

Support

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Models

File name Title Type Date
hc2g08 74HC2G08 IBIS model IBIS model 2019-03-13

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet