双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

74HC3GU04GD

Triple unbuffered inverter

The 74HC3GU04 is a triple unbuffered inverter. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC.

This product has been discontinued

Features and benefits

  • Wide supply voltage range from 2.0 V to 6.0 V

  • Symmetrical output impedance

  • High noise immunity

  • Low-power dissipation

  • Balanced propagation delays

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

Parametrics

Type number Package name
74HC3GU04GD XSON8

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
74HC3GU04GD 74HC3GU04GD,125
(935288593125)
Obsolete HU4 Standard Procedure Standard Procedure SOT996-2
XSON8
(SOT996-2)
SOT996-2 SOT996-2_125

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
74HC3GU04GD 74HC3GU04GD,125 74HC3GU04GD rohs rhf rhf
Quality and reliability disclaimer

Documentation (5)

File name Title Type Date
74HC3GU04 Triple unbuffered inverter Data sheet 2024-08-05
AN10161 PicoGate Logic footprints Application note 2002-10-29
AN11044 Pin FMEA 74HC/74HCT family Application note 2019-01-09
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT996-2 plastic, leadless extremely thin small outline package; 8 terminals; 0.5 mm pitch; 3 mm x 2 mm x 0.5 mm body Package information 2020-04-21

Support

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Models

No documents available

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.