双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

74LV02PW

Quad 2-input NOR gate

The 74LV02 is a low-voltage Si-gate CMOS device that is pin and function compatible with 74HC02 and 74HCT02.

The 74LV02 provides a quad 2-input NOR function.

This product has been discontinued

Features and benefits

  • Wide operating voltage: 1.0 V to 5.5 V

  • Optimized for low voltage applications: 1.0 V to 3.6 V

  • Accepts TTL input levels between VCC = 2.7 V and VCC = 3.6 V

  • Typical output ground bounce < 0.8 V at VCC = 3.3 V and Tamb = 25 °C

  • Typical HIGH-level output voltage (VOH) undershoot: > 2 V at VCC = 3.3 V and Tamb = 25 °C

  • ESD protection:

    • HBM JESD22-A114E exceeds 2000 V

    • MM JESD22-A115-A exceeds 200 V

  • Multiple package options

  • Specified from -40 °C to +85 °C and from -40 °C to +125 °C

Applications

PCB Symbol, Footprint and 3D Model

Model Name Description

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
74LV02PW 74LV02PW,112
(935174160112)
Obsolete no package information

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
74LV02PW 74LV02PW,112 74LV02PW rohs rhf rhf
Quality and reliability disclaimer

Documentation (2)

File name Title Type Date
74LV02 Quad 2-input NOR gate Data sheet 2017-05-10
lv02 74LV02 IBIS model IBIS model 2019-01-09

Support

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Models

File name Title Type Date
lv02 74LV02 IBIS model IBIS model 2019-01-09

PCB Symbol, Footprint and 3D Model

Model Name Description

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.