双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

74LVC373ADB-Q100

Octal D-type transparent latch with 5 V tolerant inputs/outputs; 3-state

The 74LVC373A-Q100 is an octal D-type transparent latch with 3-state outputs. The device features latch enable (LE) and output enable (OE) inputs. When LE is HIGH, data at the inputs enter the latches. In this condition the latches are transparent, a latch output will change each time its corresponding D-input changes. When LE is LOW the latches store the information that was present at the inputs a set-up time preceding the HIGH-to-LOW transition of LE. A HIGH on OE causes the outputs to assume a high-impedance OFF-state. Operation of the OE input does not affect the state of the latches. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments.

Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times.

This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.

This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications.

This product has been discontinued

Features and benefits

  • Automotive product qualification in accordance with AEC-Q100 (Grade 1)

    • Specified from -40 °C to +85 °C and from -40 °C to +125 °C

  • Overvoltage tolerant inputs to 5.5 V

  • Wide supply voltage range from 1.2 V to 3.6 V

  • CMOS low power consumption

  • Direct interface with TTL levels

  • High-impedance outputs when VCC = 0 V

  • IOFF circuitry provides partial Power-down mode operation

  • Complies with JEDEC standard:

    • JESD8-7A (1.65 V to 1.95 V)

    • JESD8-5A (2.3 V to 2.7 V)

    • JESD8-C/JESD36 (2.7 V to 3.6 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • DHVQFN package with Side-Wettable Flanks enabling Automatic Optical Inspection (AOI) of solder joints

Parametrics

Type number Package name
74LVC373ADB-Q100 SSOP20

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
74LVC373ADB-Q100 74LVC373ADB-Q100J
(935301364118)
Obsolete LVC373A SOT339-1
SSOP20
(SOT339-1)
SOT339-1 SSOP-TSSOP-VSO-WAVE
SOT339-1_118

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
74LVC373ADB-Q100 74LVC373ADB-Q100J 74LVC373ADB-Q100 rohs rhf rhf
Quality and reliability disclaimer

Documentation (8)

File name Title Type Date
74LVC373A_Q100 Octal D-type transparent latch with 5 V tolerant inputs/outputs; 3-state Data sheet 2023-08-28
AN11009 Pin FMEA for LVC family Application note 2019-01-09
AN263 Power considerations when using CMOS and BiCMOS logic devices Application note 2023-02-07
lvc373a lvc373a IBIS model IBIS model 2013-04-09
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT339-1 plastic, shrink small outline package; 20 leads; 0.65 mm pitch; 7.2 mm x 5.3 mm x 2 mm body Package information 2020-04-21
lvc lvc Spice model SPICE model 2013-05-07
SSOP-TSSOP-VSO-WAVE Footprint for wave soldering Wave soldering 2009-10-08

Support

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Models

File name Title Type Date
lvc373a lvc373a IBIS model IBIS model 2013-04-09
lvc lvc Spice model SPICE model 2013-05-07

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.