双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

BC856BT

PNP general purpose transistors

PNP transistor in an SC-75 (SOT416) plastic package. NPN complements: BC846T; BC847T series.

This product has been discontinued

Features and benefits

  • Low current (max. 100 mA)
  • Low voltage (max. 65 V).
  • AEC-Q101 qualified

Applications

  • General purpose switching and amplification, especially in portable equipment.

Parametrics

Type number Package version Package name Size (mm)
BC856BT SOT416 SC-75 1.6 x 0.75 x 0.9

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
BC856BT BC856BT,115
(934051090115)		 Obsolete 3B empty empty SOT416
SC-75
(SOT416) 		SOT416 SOT416_115

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
BC856BT BC856BT,115 BC856BT rohs rhf rhf
Quality and reliability disclaimer

Series

Documentation (5)

File name Title Type Date
BC856T_857T_SERIES PNP general purpose transistors Data sheet 2011-07-27
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
LSYMTRA Letter Symbols - Transistors; General Other type 1999-05-06
SOT416 plastic, surface-mounted package; 3 leads; 1 mm pitch; 1.6 mm x 0.75 mm x 0.9 mm body Package information 2020-04-21
BC856BT BC856BT SPICE model SPICE model 2024-08-27

Support

If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.

Models

File name Title Type Date
BC856BT BC856BT SPICE model SPICE model 2024-08-27

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet