双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

BSH205

P-channel vertical D-MOS logic level FET

Logic level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

This product has been discontinued

Features and benefits

  • Saves PCB space due to small footprint

  • Suitable for high frequency applications due to fast switching characteristics

  • Suitable for logic level gate drive sources

  • Suitable for very low gate drive sources voltage

Applications

  • Battery powered applications

  • High-speed digital interfaces

Parametrics

Type number Package version Package name Product status Release date
BSH205 SOT23 SOT23 End of life 2011-01-24

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
BSH205 BSH205,215
(934054721215)		 Obsolete SOT23
(SOT23) 		SOT23 REFLOW_BG-BD-1
WAVE_BG-BD-1
SOT23_215
BSH205,235
(934054721235)		 Obsolete SOT23_235

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
BSH205 BSH205,215 BSH205 rohs rhf rhf
BSH205 BSH205,235 BSH205 rohs rhf rhf
Quality and reliability disclaimer

Documentation (18)

File name Title Type Date
BSH205 P-channel enhancement mode MOS transistor Data sheet 1998-07-31
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
SOT23 3D model for products with SOT23 package Design support 2019-01-22
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT23_mk plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body Marcom graphics 2017-01-28
SOT23 plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body Package information 2022-10-12
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
BSH205 BSH205 SPICE model SPICE model 2012-06-08
BSH205_20_04_2012 BSH205 Spice model SPICE model 2013-12-13
TN00008 Power MOSFET frequently asked questions and answers Technical note 2023-01-12
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

Support

If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.

Models

File name Title Type Date
BSH205 BSH205 SPICE model SPICE model 2012-06-08
BSH205_20_04_2012 BSH205 Spice model SPICE model 2013-12-13
SOT23 3D model for products with SOT23 package Design support 2019-01-22

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet