双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

BUK114-50L

Logic level TOPFET SMD version of BUK104-50L/S

1

This product has been discontinued

Features and benefits

  • Vertical power DMOS output stage
  • Low on-state resistance
  • Logic and protection supply from separate pin
  • Low operating supply current
  • Overload protection against over temperature
  • Overload protection against short circuit load
  • Latched overload protection reset by protection supply
  • Protection circuit condition indicated by flag pin
  • 5 V logic compatible input level
  • Separate input pin for higher frequency drive
  • ESD protection on input, flag and protection supply pins
  • Over voltage clamping for turn off of inductive loads
  • Both linear and switching operation are possible

Applications

1

  • lamps
  • motors
  • solenoids
  • heaters

Parametrics

Type number Package version Package name Product status Release date
BUK114-50L SOT426 D2PAK End of life 2011-01-08

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
BUK114-50L BUK114-50L,118
(934045690118)
Obsolete BUK114 50L P**XXYY AZ Batch no. no package information

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
BUK114-50L BUK114-50L,118 BUK114-50L rohs rhf
Quality and reliability disclaimer

Documentation (12)

File name Title Type Date
BUK114-50L-S Logic level TOPFET SMD version of BUK104-50L/S Data sheet 1996-08-31
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11160 Designing RC Snubbers Application note 2024-10-21
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09

Support

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Models

No documents available

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.