双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

BUK6E2R0-40C

N-channel TrenchMOS FET

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.

This product has been discontinued

Features and benefits

  • AEC Q101 compliant
  • Suitable for intermediate level gate drive sources
  • Suitable for thermally demanding environments due to 175 °C rating

Applications

  • 12 V Automotive systems
  • Electric (hydraulic) power steering
  • HVAC
  • Motors, lamps and solenoid control
  • Start-Stop micro-hybrid applications
  • Transmission control
  • Ultra high performance power switching

Parametrics

Type number Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) Ptot [max] (W) VGSth [typ] (V) Automotive qualified Release date
BUK6E2R0-40C End of life N 1 40 2 175 100 333 2.1 Y 2009-11-19

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
BUK6E2R0-40C BUK6E2R0-40C,127
(934063964127)
Obsolete no package information

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
BUK6E2R0-40C BUK6E2R0-40C,127 BUK6E2R0-40C rohs rhf
Quality and reliability disclaimer

Documentation (6)

File name Title Type Date
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11160 Designing RC Snubbers Application note 2024-10-21
AN11261 RC Thermal Models Application note 2021-03-18
BUK6E2R0-40C BUK6E2R0-40C SPICE model SPICE model 2012-04-12

Support

If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.

Models

File name Title Type Date
BUK6E2R0-40C BUK6E2R0-40C SPICE model SPICE model 2012-04-12

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.