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Click here for more informationBUK7107-55AIE
N-channel TrenchPLUS standard level FET
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS current sensing and diodes for ElectroStatic Discharge (ESD) protection. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
Features and benefits
- AEC-Q101 compliant
- Electrostatically robust due to integrated protection diodes
- Low conduction losses due to low on-state resistance
- Reduced component count due to integrated current sensor
- Suitable for standard level gate drive sources
Applications
- Electrical Power Assisted Steering (EPAS)
- Variable Valve Timing for engines
Parametrics
| Type number | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | ID [max] (A) | QGD [typ] (nC) | Ptot [max] (W) | Automotive qualified | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BUK7107-55AIE | SOT426 | D2PAK | End of life | N | 1 | 55 | 7 | 75 | 50 | 272 | Y | 2010-11-18 |
Package
All type numbers in the table below are discontinued.
| Type number | Orderable part number, (Ordering code (12NC)) | Status | Marking | Package | Package information | Reflow-/Wave soldering | Packing |
|---|---|---|---|---|---|---|---|
| BUK7107-55AIE | BUK7107-55AIE,118 (934057272118) |
Obsolete | BUK7107 55AIE P**XXYY AZ Batch no. | no package information | |||
Environmental information
All type numbers in the table below are discontinued.
| Type number | Orderable part number | Chemical content | RoHS | RHF-indicator |
|---|---|---|---|---|
| BUK7107-55AIE | BUK7107-55AIE,118 | BUK7107-55AIE |
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Documentation (12)
| File name | Title | Type | Date |
|---|---|---|---|
| BUK7107-55AIE | N-channel TrenchPLUS standard level FET | Data sheet | 2010-11-18 |
| AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| AN11156 | Using Power MOSFET Zth Curves | Application note | 2021-01-04 |
| AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
| AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
| AN11160 | Designing RC Snubbers | Application note | 2024-10-21 |
| AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
| AN11261 | RC Thermal Models | Application note | 2021-03-18 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
Support
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Models
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.