双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

BUK7E8R3-40E

N-channel TrenchMOS standard level FET

Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

This product has been discontinued

Features and benefits

  • AEC-Q101 compliant
  • Repetitive avalanche rated
  • Suitable for thermally demanding environments due to 175 °C rating
  • True standard level gate with VGS(th) rating of greater than 1 V at 175 °C

Applications

  • 12 V Automotive systems
  • Motors, lamps and solenoid control
  • Start-Stop micro-hybrid applications
  • Transmission control
  • Ultra high performance power switching

Parametrics

Type number Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
BUK7E8R3-40E SOT226 I2PAK End of life N 1 40 7.4 175 75 7.4 24 96 10.7 3 Y 1300 260 2012-09-06

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
BUK7E8R3-40E BUK7E8R3-40E,127
(934066418127)		 Withdrawn / End-of-life BUK7E8R3 40E SOT226
I2PAK
(SOT226) 		SOT226 Not available

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
BUK7E8R3-40E BUK7E8R3-40E,127 BUK7E8R3-40E rohs rhf
Quality and reliability disclaimer

Series

Documentation (19)

File name Title Type Date
BUK7E8R3-40E N-channel TrenchMOS standard level FET Data sheet 2017-04-20
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11160 Designing RC Snubbers Application note 2024-10-21
AN11172 Mounting instructions for SOT78 (TO-220AB); SOT186A (TO-220F) Application note 2021-05-21
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
SOT226 3D model for products with SOT226 package Design support 2017-06-30
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT226 plastic, single-ended package (I2PAK); 3 terminals; 2.54 mm pitch; 11 mm x 10 mm x 4.3 mm body Package information 2020-04-21
BUK7E8R3-40E BUK7E8R3-40E Spice model SPICE model 2012-10-05
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09
BUK7E8R3-40E_RC_Thermal_Model BUK7E8R3-40E Thermal design model Thermal design 2021-01-18
BUK7E8R3-40E BUK7E8R3-40E Thermal model Thermal model 2012-10-08

Support

If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.

Models

File name Title Type Date
BUK7E8R3-40E BUK7E8R3-40E Spice model SPICE model 2012-10-05
BUK7E8R3-40E_RC_Thermal_Model BUK7E8R3-40E Thermal design model Thermal design 2021-01-18
BUK7E8R3-40E BUK7E8R3-40E Thermal model Thermal model 2012-10-08
SOT226 3D model for products with SOT226 package Design support 2017-06-30

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet