双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

BZX8450-C12

Low-current voltage regulator diodes in a small SOT23 Surface-Mounted Device (SMD) plastic package.

Features and benefits

  • Total power dissipation: ≤ 250 mW

  • Two tolerance series: ± 2 % and approximately ± 5 %

  • Working voltage range: nominal 1.8 V to 51 V

  • Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

  • BZX8450-B11 to -C51: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031].

Applications

  • Low-current general regulation functions

Documentation (1)

File name Title Type Date
BZX8450_SER Low-current voltage regulator diodes Data sheet 2024-07-17

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How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet