双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

CBT3384DK

10-bit bus switch with 5-bit output enables

The CBT3384 is a dual 5-pole, single-throw bus switch. The device features two output enable inputs (nOE) that each control five switch channels. The switches are disabled when the associated nOE input is HIGH. This device is fully specified for partial power down applications using IOFF.

This product has been discontinued

Features and benefits

  • 5 Ω switch connection between two ports

  • Direct interface with TTL levels

  • Overvoltage tolerant control inputs to 5.5 V

  • IOFF circuitry provides partial Power-down mode operation

  • Latch-up protection exceeds 100 mA per JESD78

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Specified from -40 °C to +85 °C

Parametrics

Type number Package name
CBT3384DK SSOP24

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
CBT3384DK CBT3384DK,118
(935270731118)		 Obsolete CBT3384DK Standard Procedure Standard Procedure no package information

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
CBT3384DK CBT3384DK,118 CBT3384DK rohs rhf rhf
Quality and reliability disclaimer

Series

Documentation (2)

File name Title Type Date
CBT3384 10-bit bus switch with 5-bit output enables Data sheet 2024-06-25
AN90010 Pin FMEA for CBT(D) family Application note 2019-10-28

Support

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Models

No documents available

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet