Orderable parts
| Type number | Orderable part number | Ordering code (12NC) | Package | Buy from distributors |
|---|---|---|---|---|
| GAN111-650WSB | GAN111-650WSBQ | 934666222127 | SOT429-3 | Order product |
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Click here for more informationGAN111-650WSB
650 V, 97 mOhm Gallium Nitride (GaN) FET in a TO-247 package
The GAN111-650WSB is a 650 V, 97 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.
Features and benefits
Ultra-low reverse recovery charge
Simple gate drive (0 V to +10 V or +12 V)
Robust gate oxide (±20 V capability)
High gate threshold voltage (+4 V) for very good gate bounce immunity
Very low source-drain voltage in reverse conduction mode
Transient over-voltage capability
Applications
Hard and soft switching converters for industrial and datacom power
AC/DC Bridgeless totem-pole PFC
DC/DC High-frequency resonant converters
Datacom and telecom (AC/DC and DC/DC) converters
Solar (PV) inverters
Servo motor drives
TV PSU and LED drivers
Parametrics
| Type number | Package version | Package name | Product status | Configuration | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GAN111-650WSB | SOT429-3 | TO-247-3L | Production | cascode | N | 1 | 650 | 114 | 175 | 21 | 0.8 | 4.9 | 107 | 65 | 4.1 | N | 336 | 49 | 2024-07-03 |
Package
| Type number | Orderable part number, (Ordering code (12NC)) | Status | Marking | Package | Package information | Reflow-/Wave soldering | Packing |
|---|---|---|---|---|---|---|---|
| GAN111-650WSB | GAN111-650WSBQ (934666222127) |
Active | GAN111 650WSB |
TO-247-3L (SOT429-3) |
SOT429-3 | Not available |
Boards
| Part number | Description | Type | Quick links | Shop link |
|---|---|---|---|---|
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Description The NX-HB-GAN111UL half-bridge evaluation board provides the elements of a simple buck or boost converter. This enables the basic study of the switching characteristics and efficiency achievable with Nexperia’s 650V Cascode GaN FETs. The circuit is configured for synchronous rectification, in either buck or boost mode. Selection jumpers allow the use of a single logic input or separate high / low level inputs. The voltage input and output can operate at up to 400 VDC, with a power output > 2000 Watts.
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Type Evaluation board
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Quick links
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Shop link
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Environmental information
| Type number | Orderable part number | Chemical content | RoHS | RHF-indicator |
|---|---|---|---|---|
| GAN111-650WSB | GAN111-650WSBQ | GAN111-650WSB |
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Documentation (10)
| File name | Title | Type | Date |
|---|---|---|---|
| GAN111-650WSB | 650 V, 97 mOhm Gallium Nitride (GaN) FET in a TO-247 package | Data sheet | 2024-06-24 |
| SOT429-3 | Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L | Package information | 2023-12-07 |
| GAN111-650WSB_models_LTspice | GAN111-650WSB LTspice model | SPICE model | 2024-07-22 |
| GAN111-650WSB_models_SIMetrix | GAN111-650WSB SIMetrix model | SPICE model | 2024-07-22 |
| CauerModel_GAN111-650WSB | Cauer model GAN111-650WSB | Thermal model | 2024-07-23 |
| FosterModel_GAN111-650WSB | Foster model GAN111-650WSB | Thermal model | 2024-07-23 |
| GAN111-650WSB | GAN111-650WSB RC thermal model | Thermal model | 2024-07-23 |
| GAN111-650WSB_Cauer | GAN111-650WSB Cauer model | Thermal model | 2024-07-23 |
| GAN111-650WSB_Foster | GAN111-650WSB Foster model | Thermal model | 2024-07-23 |
| UM90045 | NX-HB-GAN111UL 2.0 kW half-bridge evaluation board user guide | User manual | 2024-09-06 |
Support
If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.
Models
| File name | Title | Type | Date |
|---|---|---|---|
| GAN111-650WSB_models_LTspice | GAN111-650WSB LTspice model | SPICE model | 2024-07-22 |
| GAN111-650WSB_models_SIMetrix | GAN111-650WSB SIMetrix model | SPICE model | 2024-07-22 |
| CauerModel_GAN111-650WSB | Cauer model GAN111-650WSB | Thermal model | 2024-07-23 |
| FosterModel_GAN111-650WSB | Foster model GAN111-650WSB | Thermal model | 2024-07-23 |
| GAN111-650WSB | GAN111-650WSB RC thermal model | Thermal model | 2024-07-23 |
| GAN111-650WSB_Cauer | GAN111-650WSB Cauer model | Thermal model | 2024-07-23 |
| GAN111-650WSB_Foster | GAN111-650WSB Foster model | Thermal model | 2024-07-23 |
Ordering, pricing & availability
| Type number | Orderable part number | Ordering code (12NC) | Status | Packing | Packing Quantity | Buy online |
|---|---|---|---|---|---|---|
| GAN111-650WSB | GAN111-650WSBQ | 934666222127 | Active | Not available | 300 | Order product |
Sample
As a Nexperia customer you can order samples via our sales organization.
If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples. Check out the list of official distributors.
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
GAN111-650WSB
650 V, 97 mOhm Gallium Nitride (GaN) FET in a TO-247 package
Buy from Nexperia
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