Orderable parts
Type number | Orderable part number | Ordering code (12NC) | Package | Buy from distributors |
---|---|---|---|---|
GAN111-650WSB | GAN111-650WSBQ | 934666222127 | SOT429-3 | Order product |
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Click here for more information650 V, 97 mOhm Gallium Nitride (GaN) FET in a TO-247 package
The GAN111-650WSB is a 650 V, 97 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.
Ultra-low reverse recovery charge
Simple gate drive (0 V to +10 V or +12 V)
Robust gate oxide (±20 V capability)
High gate threshold voltage (+4 V) for very good gate bounce immunity
Very low source-drain voltage in reverse conduction mode
Transient over-voltage capability
Hard and soft switching converters for industrial and datacom power
AC/DC Bridgeless totem-pole PFC
DC/DC High-frequency resonant converters
Datacom and telecom (AC/DC and DC/DC) converters
Solar (PV) inverters
Servo motor drives
TV PSU and LED drivers
Type number | Package version | Package name | Product status | Configuration | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
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GAN111-650WSB | SOT429-3 | TO-247-3L | Production | cascode | N | 1 | 650 | 114 | 175 | 21 | 0.8 | 4.9 | 107 | 65 | 4.1 | N | 336 | 49 | 2024-07-03 |
Type number | Orderable part number, (Ordering code (12NC)) | Status | Marking | Package | Package information | Reflow-/Wave soldering | Packing |
---|---|---|---|---|---|---|---|
GAN111-650WSB | GAN111-650WSBQ (934666222127) |
Active | GAN111 650WSB |
TO-247-3L (SOT429-3) |
SOT429-3 | Not available |
Type number | Orderable part number | Chemical content | RoHS | RHF-indicator |
---|---|---|---|---|
GAN111-650WSB | GAN111-650WSBQ | GAN111-650WSB |
File name | Title | Type | Date |
---|---|---|---|
GAN111-650WSB | 650 V, 97 mOhm Gallium Nitride (GaN) FET in a TO-247 package | Data sheet | 2024-06-24 |
SOT429-3 | Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L | Package information | 2023-12-07 |
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No documents available
Type number | Orderable part number | Ordering code (12NC) | Status | Packing | Packing Quantity | Buy online |
---|---|---|---|---|---|---|
GAN111-650WSB | GAN111-650WSBQ | 934666222127 | Active | Not available | 300 | Order product |
As a Nexperia customer you can order samples via our sales organization.
If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples. Check out the list of official distributors.
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.