双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

HEF40098BT

Hex inverting buffer; 3-state

The HEF40098B is a hex inverting buffer with 3-state outputs. The 3-state outputs are controlled by two active LOW enable inputs (1OE and 2OE). A HIGH on 1OE causes four of the six active LOW buffer elements (1Y0 to 1Y3) to assume a high-impedance or OFF-state regardless of the other input conditions and a HIGH on 2OE causes the outputs of the remaining two buffer elements (2Y0 and 2Y1) to assume a high-impedance or OFF-state regardless of the other input conditions.

It operates over a recommended VDD power supply range of 3 V to 15 V referenced to VSS (usually ground). Unused inputs must be connected to VDD, VSS, or another input.

This product has been discontinued

Features and benefits

  • Fully static operation

  • 5 V, 10 V, and 15 V parametric ratings

  • Standardized symmetrical output characteristics

  • Specified from -40 °C to +85 °C

  • Complies with JEDEC standard JESD 13-B

Applications

PCB Symbol, Footprint and 3D Model

Model Name Description

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
HEF40098BT HEF40098BT,652
(933373410652)
Obsolete no package information
HEF40098BT,653
(933373410653)
Obsolete

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
HEF40098BT HEF40098BT,652 HEF40098BT rohs rhf rhf
HEF40098BT HEF40098BT,653 HEF40098BT rohs rhf rhf
Quality and reliability disclaimer

Documentation (2)

File name Title Type Date
HEF40098B Hex inverting buffer: 3- state Data sheet 2017-03-17
AN11051 Pin FMEA HEF4000 family Application note 2019-01-09

Support

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Models

No documents available

PCB Symbol, Footprint and 3D Model

Model Name Description

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.