双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

IP4251CZ8-4-TTL

Integrated 4-, 6- and 8-channel passive filter network with ESD protection

The devices are 4-, 6- and 8-channel RC low-pass filter arrays which are designed to provide filtering of undesired RF signals on the I/O ports of portable communication or computing devices. In addition, the devices incorporate diodes to provide protection to downstream components from ElectroStatic Discharge (ESD) voltages as high as ±30 kV.

The devices are fabricated using monolithic silicon technology and integrate up to eight resistors and sixteen diodes in a 0.4 mm pitch 8-, 12- or 16-pin ultra-thin leadless Quad Flat No-leads (QFN) plastic package with a height of 0.55 mm only.

This product has been discontinued

Features and benefits

  • Pb-free, Restriction of Hazardous Substances (RoHS) compliant and free of halogen and antimony (Dark Green compliant)

  • 4-, 6- and 8-channel integrated π-type RC filter network

  • ESD protection to ±30 kV contact discharge according to IEC 61000-4-2 far exceeding level 4

  • QFN plastic package with 0.4 mm pitch and 0.55 mm height

Applications

General-purpose ElectroMagnetic Interference (EMI) and Radio-Frequency Interference (RFI) filtering and downstream ESD protection for:

  • Cellular phone and Personal Communication System (PCS) mobile handsets

  • Cordless telephones

  • Wireless data (WAN/LAN) systems

  • Mobile Internet Devices (MID)

  • Portable Media Players (PMP)

Documentation (1)

File name Title Type Date
IP4251_52_53_54-TTL Integrated 4-, 6- and 8-channel passive filter network with ESD protection Data sheet 2017-06-02

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Models

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How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet