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Click here for more informationPBSS9410PA
100 V, 2.7 A PNP low VCEsat (BISS) transistor
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.
NPN complement: PBSS8510PA.
Features and benefits
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
Exposed heat sink for excellent thermal and electrical conductivity
Leadless small SMD plastic package with medium power capability
Applications
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
Parametrics
| Type number | Package version | Package name | Size (mm) | channel type (e) | Ptot (mW) | VCEO [max] (V) | IC [max] (mA) | hFE [min] | TJ [max] (°C) | fT [min] (MHz) | Automotive qualified |
|---|---|---|---|---|---|---|---|---|---|---|---|
| PBSS9410PA | SOT1061 | DFN2020-3 | 2 x 2 x 0.65 | PNP | 500.0 | -100.0 | -2700.0 | 180.0 | 150 | 70.0 | N |
Package
All type numbers in the table below are discontinued.
| Type number | Orderable part number, (Ordering code (12NC)) | Status | Marking | Package | Package information | Reflow-/Wave soldering | Packing |
|---|---|---|---|---|---|---|---|
| PBSS9410PA | PBSS9410PA,115 (934063926115) |
Discontinued / End-of-life | AG |
DFN2020-3 (SOT1061) |
SOT1061 |
REFLOW_BG-BD-1
|
SOT1061_115 |
Environmental information
All type numbers in the table below are discontinued.
| Type number | Orderable part number | Chemical content | RoHS | RHF-indicator |
|---|---|---|---|---|
| PBSS9410PA | PBSS9410PA,115 | PBSS9410PA |
|
|
Documentation (11)
| File name | Title | Type | Date |
|---|---|---|---|
| PBSS9410PA | 100 V, 2.7 A PNP low V_CEsat (BISS) transistor | Data sheet | 2010-05-31 |
| AN10909 | Low VCEsat transistors in medium power loadswitch applications | Application note | 2013-03-14 |
| AN11045 | Next generation of NXP low VCEsat transistors: improved technology for discrete semiconductors | Application note | 2013-03-04 |
| AN11076 | Thermal behavior of small-signal discretes on multilayer PCBs | Application note | 2021-06-23 |
| SOT1061 | 3D model for products with SOT1061 package | Design support | 2022-06-02 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| DFN2020-3_SOT1061_mk | plastic, thermal enhanced ultra thin small outline package; 3 terminals; 1.3 mm pitch; 2 mm x 2 mm x 0.65 mm body | Marcom graphics | 2017-01-28 |
| SOT1061 | plastic, leadless thermal enhanced ultra thin small outline package; 3 terminals; 1.3 mm pitch; 2 mm x 2 mm x 0.65 mm body | Package information | 2022-05-27 |
| PBSS9410PA_Nexperia_Product_Reliability | PBSS9410PA Nexperia Product Reliability | Quality document | 2024-04-23 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| PBSS9410PA | PBSS9410PA SPICE model | SPICE model | 2024-08-27 |
Support
If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.
Models
| File name | Title | Type | Date |
|---|---|---|---|
| PBSS9410PA | PBSS9410PA SPICE model | SPICE model | 2024-08-27 |
| SOT1061 | 3D model for products with SOT1061 package | Design support | 2022-06-02 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
PBSS9410PA
100 V, 2.7 A PNP low VCEsat (BISS) transistor
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