双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PDTA113ZE

PNP resistor-equipped transistors; R1 = 1 kOhm, R2 = 10 kOhm

PNP resistor-equipped transistors.

This product has been discontinued

Features and benefits

  • Built-in bias resistors

  • Reduces component count

  • Simplifies circuit design

  • Reduces pick and place costs

  • AEC-Q101 qualified

Applications

  • General purpose switching and amplification

  • Circuit drivers

  • Inverter and interface circuits

Parametrics

Type number Package version Package name Size (mm)
PDTA113ZE SOT416 SC-75 1.6 x 0.75 x 0.9

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
PDTA113ZE PDTA113ZE,115
(934058803115)		 Obsolete SOT416
SC-75
(SOT416) 		SOT416 SOT416_115

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
PDTA113ZE PDTA113ZE,115 PDTA113ZE rohs rhf rhf
Quality and reliability disclaimer

Documentation (5)

File name Title Type Date
PDTA113Z_SER PNP resistor-equipped transistors; R1 = 1 kOhm, R2 = 10 kOhm Data sheet 2009-09-21
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
LSYMTRA Letter Symbols - Transistors; General Other type 1999-05-06
SOT416 plastic, surface-mounted package; 3 leads; 1 mm pitch; 1.6 mm x 0.75 mm x 0.9 mm body Package information 2020-04-21
PDTA113ZE PDTA113ZE SPICE model SPICE model 2024-08-27

Support

If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.

Models

File name Title Type Date
PDTA113ZE PDTA113ZE SPICE model SPICE model 2024-08-27

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet