双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PDTC115TE

NPN resistor-equipped transistors; R1 = 100 kOhm, R2 = open

NPN resistor-equipped transistors.

This product has been discontinued

Features and benefits

  • Built-in bias resistor

  • Reduces component count

  • Simplifies circuit design

  • Reduces pick and place costs

  • AEC-Q101 qualified

Applications

  • General-purpose switching and amplification

  • Circuit drivers

  • Inverter and interface circuits

Parametrics

Type number Package version Package name Size (mm)
PDTC115TE SOT416 SC-75 1.6 x 0.75 x 0.9

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
PDTC115TE PDTC115TE,115
(934058805115)		 Obsolete SOT416
SC-75
(SOT416) 		SOT416 SOT416_115

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
PDTC115TE PDTC115TE,115 PDTC115TE rohs rhf rhf
Quality and reliability disclaimer

Series

Documentation (5)

File name Title Type Date
PDTC115T_SER NPN resistor-equipped transistors; R1 = 100 kOhm, R2 = open Data sheet 2020-07-14
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
LSYMTRA Letter Symbols - Transistors; General Other type 1999-05-06
SOT416 plastic, surface-mounted package; 3 leads; 1 mm pitch; 1.6 mm x 0.75 mm x 0.9 mm body Package information 2020-04-21
PDTC115TE PDTC115TE SPICE model SPICE model 2024-08-27

Support

If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.

Models

File name Title Type Date
PDTC115TE PDTC115TE SPICE model SPICE model 2024-08-27

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet