双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PESD16VX1UL

Ultra low capacitance unidirectional ESD protection diode

Ultra low capacitance unidirectional ElectroStatic Discharge (ESD) protection diode in a leadless ultra small SOD882 Surface-Mounted Device (SMD) plastic package designed to protect one signal line from the damage caused by ESD and other transients. The combination of extremely low capacitance, high ESD maximum rating and ultra small package makes the device ideal for high-speed data line protection and antenna protection applications.

This product has been discontinued

Features and benefits

  • Unidirectional ESD protection of one line
  • Ultra low diode capacitance: Cd = 0.83 pF
  • Low ESD clamping voltage: 40 V at 30 ns and ±8 kV
  • Very low leakage current: IRM < 10 nA
  • ESD protection up to 8 kV
  • IEC 61000-4-2; level 4 (ESD)
  • AEC-Q101 qualified

Applications

  • 10/100/1000 Mbit/s Ethernet
  • FireWire
  • High-speed data lines
  • Subscriber Identity Module (SIM) card protection
  • Cellular handsets and accessories
  • Portable electronics
  • Communication systems
  • Computers and peripherals
  • Audio and video equipment
  • Antenna protection

Documentation (1)

File name Title Type Date
PESD16VX1UL PESD16VX1UL SPICE model SPICE model 2024-07-08

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Models

File name Title Type Date
PESD16VX1UL PESD16VX1UL SPICE model SPICE model 2024-07-08

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet