双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PESD5V0F5UF

Femtofarad unidirectional fivefold ESD protection array

Femtofarad capacitance unidirectional ElectroStatic Discharge (ESD) protection diode array designed to protect up to five signal lines from the damage caused by ESD and other transients. The device is encapsulated in a leadless ultra small DFN1410-6 (SOT886) Surface-Mounted Device (SMD) plastic package.

The combination of extremely low capacitance, high ESD maximum rating and ultra small package makes the device ideal for high-speed data line protection and antenna protection applications.

This product has been discontinued

Features and benefits

  • ESD protection of up to 5 lines
  • Low diode capacitance Cd = 0.55 pF
  • Ultra low leakage current IRM < 1 nA
  • ESD protection up to 8 kV
  • IEC 61000-4-2; level 4 (ESD)
  • IEC 61000-4-5 (surge); IPPM = 2 A
  • AEC-Q101 qualified

Applications

  • Computers and peripherals
  • Audio and video equipment
  • Cellular handsets and accessories
  • 10/100/1000 Mbit/s Ethernet
  • Communication systems
  • Portable electronics
  • SIM card protection
  • High-speed data lines

Documentation

No documents available

Support

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Models

No documents available

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet