双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PESD5V0L7BAS

Low capacitance 7-fold bidirectional ESD protection diode arrays

Low capacitance 7-fold bidirectional ESD protection diode arrays in small plastic packages designed for the protection of up to seven transmission or data lines from damage caused by ElectroStatic Discharge (ESD) and other transients.

This product has been discontinued

Features and benefits

  • ESD protection of up to seven lines
  • Low diode capacitance
  • Max. peak pulse power: PPP = 35 W
  • Low clamping voltage: VCL = 17 V
  • Ultra low leakage current: IRM = 3 nA
  • ESD protection of up to 10 kV
  • IEC 61000-4-2, level 4 (ESD)
  • IEC 61000-4-5 (surge); IPP = 2.5 A
  • AEC-Q101 qualified

Applications

  • Computers and peripherals
  • Communication systems
  • Audio and video equipment
  • High-speed data lines
  • Parallel ports

Documentation (2)

File name Title Type Date
PESD5V0L7BAS_BS Low capacitance 7-fold bidirectional ESD protection diode arrays Data sheet 2023-04-13
PESD5V0L7BAS PESD5V0L7BAS SPICE model SPICE model 2024-10-14

Support

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Models

File name Title Type Date
PESD5V0L7BAS PESD5V0L7BAS SPICE model SPICE model 2024-10-14

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet