双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PHB191NQ06LT

N-channel TrenchMOS logic level FET

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

This product has been discontinued

Features and benefits

  • Low conduction losses due to low on-state resistance

  • Suitable for logic level gate drive sources

Applications

  • DC-to-DC convertors

  • General industrial applications

  • Motors, lamps and solenoids

  • Uninterruptible power supplies

Parametrics

Type number Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) RDSon [max] @ VGS = 5 V (mΩ) RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PHB191NQ06LT SOT404 D2PAK End of life N 1 55 3.7 4.2 4.4 175 75 37.6 300 171 1.5 N 7665 1045 2010-11-13

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
PHB191NQ06LT PHB191NQ06LT,118
(934058543118)		 Discontinued / End-of-life PHB191 NQ06LT SOT404
D2PAK
(SOT404) 		SOT404 REFLOW_BG-BD-1
WAVE_BG-BD-1
SOT404_118

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
PHB191NQ06LT PHB191NQ06LT,118 PHB191NQ06LT rohs rhf
Quality and reliability disclaimer

Documentation (21)

File name Title Type Date
PHB191NQ06LT N-channel TrenchMOS logic level FET Data sheet 2010-01-13
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11160 Designing RC Snubbers Application note 2024-10-21
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
SOT404 3D model for products with SOT226 package Design support 2017-06-30
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
D2PAK_SOT404_mk plastic, single-ended surface-mounted package (D2PAK); 3 terminals (one lead cropped); 2.54 mm pitch; 11 mm x 10 mm x 4.3 mm body Marcom graphics 2017-01-28
SOT404 plastic, single-ended surface-mounted package (D2PAK); 3 terminals (one lead cropped); 2.54 mm pitch; 11 mm x 10 mm x 4.3 mm body Package information 2022-05-27
Reliability_information_t3_sot404 Reliability Information T3-SOT404 Quality document 2023-01-27
T3_SOT404_PHB191NQ06LT_Nexperia_Quality_document PHB191NQ06LT Quality document Quality document 2023-01-27
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
PHB191NQ06LT PHB191NQ06LT Spice model SPICE model 2013-07-30
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

Support

If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.

Models

File name Title Type Date
PHB191NQ06LT PHB191NQ06LT Spice model SPICE model 2013-07-30
SOT404 3D model for products with SOT226 package Design support 2017-06-30

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet