双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PHT4NQ10LT

N-channel TrenchMOS logic level FET

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications.

This product has been discontinued

Features and benefits

  • Low conduction losses due to low on-state resistance
  • Logic level compatible

Applications

  • DC-to-DC converters
  • General purpose switching
  • High-speed line drivers

Parametrics

Type number Package version Package name Product status Channel type Nr of transistors VDS [max] (V) VGS [max] (V) RDSon [max] @ VGS = 5 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) Ptot [max] (W) Qr [typ] (nC) Automotive qualified Release date
PHT4NQ10LT SOT223 SC-73 End of life N 1 100 16 250 150 3.5 3.6 6.9 100 N 2011-01-24

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
PHT4NQ10LT PHT4NQ10LT,135
(934056122135)		 Obsolete 4NQ10L empty empty SOT223
SC-73
(SOT223) 		SOT223 REFLOW_BG-BD-1
WAVE_BG-BD-1
SOT223_135

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
PHT4NQ10LT PHT4NQ10LT,135 PHT4NQ10LT rohs rhf rhf
Quality and reliability disclaimer

Documentation (18)

File name Title Type Date
PHT4NQ10LT N-channel TrenchMOS logic level FET Data sheet 2011-11-02
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11160 Designing RC Snubbers Application note 2024-10-21
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
SOT223 3D model for products with SOT223 package Design support 2019-01-22
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SC-73_SOT223_mk plastic, surface-mounted package with increased heatsink; 4 leads; 4.6 mm pitch; 6.5 mm x 3.5 mm x 1.65 mm body Marcom graphics 2017-01-28
SOT223 plastic, surface-mounted package with increased heatsink; 4 leads; 2.3 mm pitch; 6.5 mm x 3.5 mm x 1.65 mm body Package information 2022-05-30
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
PHT4NQ10LT_25_7_2011 PHT4NQ10LT_25_7_2011 Spice parameter SPICE model 2011-08-22
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

Support

If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.

Models

File name Title Type Date
PHT4NQ10LT_25_7_2011 PHT4NQ10LT_25_7_2011 Spice parameter SPICE model 2011-08-22
SOT223 3D model for products with SOT223 package Design support 2019-01-22

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet