双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PMDPB95XNE

30 V dual N-channel Trench MOSFET

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

This product has been discontinued

Features and benefits

  • Very fast switching
  • Trench MOSFET technology
  • Leadless medium power SMD plastic package: 2 × 2 × 0.6 mm
  • Exposed drain pad for excellent thermal conduction
  • ESD protection up to 1.8 kV

Applications

  • Charging switch for portable devices
  • DC-to-DC converters
  • Small brushless DC motor drive
  • Power management in battery-driven portables
  • Hard disk and computing power management

Parametrics

Type number Package version Package name Product status Channel type Nr of transistors VDS [max] (V) VGS [max] (V) RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) RDSon [max] @ VGS = 2.5 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 4.5 V (nC) Ptot [max] (W) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PMDPB95XNE SOT1118 DFN2020-6 End of life N 2 30 12 120 165 150 3.1 0.45 1.65 0.475 1 N 143 43 2012-09-27

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
PMDPB95XNE PMDPB95XNE,115
(934067055115)		 Obsolete SOT1118
DFN2020-6
(SOT1118) 		SOT1118 REFLOW_BG-BD-1
SOT1118_115

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
PMDPB95XNE PMDPB95XNE,115 PMDPB95XNE rohs rhf rhf
Quality and reliability disclaimer

Documentation (15)

File name Title Type Date
PMDPB95XNE 30 V dual N-channel Trench MOSFET Data sheet 2012-09-26
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11304 MOSFET load switch PCB with thermal measurement Application note 2013-01-28
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
SOT1118 3D model for products with SOT1118 package Design support 2019-10-07
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
DFN2020-6_SOT1118_mk plastic, thermal enhanced ultra thin small outline package; no leads; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body Marcom graphics 2017-01-28
SOT1118 plastic, leadless thermal enhanced ultra thin small outline package; no leads; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body Package information 2022-06-02
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
PMDPB95XNE_11_9_21 PMDPB95XNE Spice model SPICE model 2013-12-13
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09

Support

If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.

Models

File name Title Type Date
PMDPB95XNE_11_9_21 PMDPB95XNE Spice model SPICE model 2013-12-13
SOT1118 3D model for products with SOT1118 package Design support 2019-10-07

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet