双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PMN50XP

P-channel TrenchMOS extremely low level FET

Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

This product has been discontinued

Features and benefits

  • Low conduction losses due to low on-state resistance
  • Suitable for low gate drive sources

Applications

  • Battery management
  • Battery powered portable equipment
  • Load switching
  • Low power DC-to-DC convertors

Parametrics

Type number Package version Package name Product status Release date
PMN50XP SOT457 TSOP6 End of life 2011-01-24

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
PMN50XP PMN50XP,165
(934058528165)		 Obsolete 50 YM p SOT457
TSOP6
(SOT457) 		SOT457 REFLOW_BG-BD-1
WAVE_BG-BD-1
SOT457_165

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
PMN50XP PMN50XP,165 PMN50XP rohs rhf rhf
Quality and reliability disclaimer

Documentation (19)

File name Title Type Date
PMN50XP P-channel TrenchMOS extremely low level FET Data sheet 2007-10-01
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN10910 Protecting charger interfaces and typical battery charging topologies with external bypass transistors Application note 2021-04-12
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
Nexperia_document_guide_MiniLogic_PicoGate_201901 PicoGate leaded logic portfolio guide Brochure 2019-01-07
SOT457 3D model for products with SOT457 package Design support 2022-11-04
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
TSOP6_SOT457_mk plastic, surface-mounted package (TSOP6); 6 leads; 0.95 mm pitch; 2.9 mm x 1.5 mm x 1 mm body Marcom graphics 2017-01-28
SOT457 plastic, surface-mounted package (SC-74; TSOP6); 6 leads Package information 2023-03-03
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
TN00008 Power MOSFET frequently asked questions and answers Technical note 2023-01-12
MAR_SOT457 MAR_SOT457 Topmark Top marking 2013-06-03
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

Support

If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.

Models

File name Title Type Date
SOT457 3D model for products with SOT457 package Design support 2022-11-04

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet