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Click here for more informationPMR280UN
N-channel TrenchMOS ultra low level FET
N-channel enhancement mode Field-Effect Transistor (FET) in ultra small Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.
Alternatives
Features and benefits
- Surface mounted package
- Low on-state resistance
- Footprint 63% smaller than SOT23
- Low threshold voltage
Applications
- Driver circuits
- Switching in portable appliances
Parametrics
| Type number | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | VGS [max] (V) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | RDSon [max] @ VGS = 2.5 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | Ptot [max] (W) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PMR280UN | SOT416 | SC-75 | End of life | N | 1 | 20 | 8 | 340 | 430 | 150 | 0.98 | 0.18 | 0.89 | 0.53 | 0.7 | N | 45 | 11 | 2011-01-24 |
Package
All type numbers in the table below are discontinued.
| Type number | Orderable part number, (Ordering code (12NC)) | Status | Marking | Package | Package information | Reflow-/Wave soldering | Packing |
|---|---|---|---|---|---|---|---|
| PMR280UN | PMR280UN,115 (934057958115) |
Obsolete |
SC-75 (SOT416) |
SOT416 | SOT416_115 |
Environmental information
All type numbers in the table below are discontinued.
| Type number | Orderable part number | Chemical content | RoHS | RHF-indicator |
|---|---|---|---|---|
| PMR280UN | PMR280UN,115 | PMR280UN |
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Documentation (13)
| File name | Title | Type | Date |
|---|---|---|---|
| PMR280UN | N-channel TrenchMOS ultra low level FET | Data sheet | 2012-02-06 |
| AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
| AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
| AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
| AN11261 | RC Thermal Models | Application note | 2021-03-18 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SOT416 | plastic, surface-mounted package; 3 leads; 1 mm pitch; 1.6 mm x 0.75 mm x 0.9 mm body | Package information | 2020-04-21 |
| PMR280UN_9_8_2011 | PMR280UN_9_8_2011 Spice parameter | SPICE model | 2012-04-16 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
Support
If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.
Models
| File name | Title | Type | Date |
|---|---|---|---|
| PMR280UN_9_8_2011 | PMR280UN_9_8_2011 Spice parameter | SPICE model | 2012-04-16 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
PMR280UN
N-channel TrenchMOS ultra low level FET
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