双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PRLL5819

Schottky barrier diodes

The PRLL5817 to PRLL5819 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD87 hermetically sealed glass SMD packages incorporating ImplotecTM 1 technology.

1) Implotec is a trademark of Philips.

This product has been discontinued

Features and benefits

  • Low switching losses
  • Fast recovery time
  • Guard ring protected
  • Hermetically sealed glass SMD package.

Applications

  • Low power, switched-mode power supplies
  • Rectifying
  • Polarity protection.

Parametrics

Type number Package version Package name Size (mm)
PRLL5819 SOD87 MELF 3.5 x 2.1

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
PRLL5819 PRLL5819,115
(933968020115)
Obsolete SOD87
MELF
(SOD87)
SOD87 SOD87_115

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
PRLL5819 PRLL5819,115 PRLL5819 rohs rhf
Quality and reliability disclaimer

Documentation (4)

File name Title Type Date
PRLL5817_18_19 Schottky barrier diodes Data sheet 1999-04-21
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOD87 glass, hermetically sealed glass surface mounted package; 2 terminals; 3.5 mm x 2.1 mm body Package information 2020-04-21
PRLL5819 PRLL5819 SPICE model SPICE model 2012-06-08

Support

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Models

File name Title Type Date
PRLL5819 PRLL5819 SPICE model SPICE model 2012-06-08

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.