双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PRTR5V0U2K

Ultra low capacitance double rail-to-rail ESD protection

Ultra low capacitance double rail-to-rail ElectroStatic Discharge (ESD) protection devices in leadless ultra small Surface-Mounted Device (SMD) plastic packages.

The devices are designed to protect two Hi-Speed data lines or high-frequency signal lines from the damage caused by ESD and other transients.

PRTR5V0U2F and PRTR5V0U2K integrate two ultra low capacitance rail-to-rail ESD protection channels and one additional ESD protection diode each to ensure signal line protection even if no supply voltage is available.

This product has been discontinued

Features and benefits

  • ESD protection of two Hi-Speed data lines or high-frequency signal lines

  • Ultra low input/output to ground capacitance: C(I/O-GND) = 1 pF

  • ESD protection up to 8 kV

  • IEC 61000-4-2, level 4 (ESD)

  • Very low clamping voltage due to an integrated additional ESD protection diode

  • Very low reverse current

  • AEC-Q101 qualified

  • Leadless ultra small SMD plastic packages

Applications

  • USB 2.0 interfaces

  • Digital Video Interface (DVI) / High Definition Multimedia Interface (HDMI) interfaces

  • Mobile and cordless phones

  • Personal Digital Assistants (PDA)

  • Digital cameras

  • Wide Area Network (WAN) / Local Area Network (LAN) systems

  • PCs, notebooks, printers and other PC peripherals

Documentation (2)

File name Title Type Date
PRTR5V0U2F_PRTR5V0U2K Ultra low capacitance double rail-to-rail ESD protection Data sheet 2023-04-13
AN10753 ESD protection for USB 2.0 interfaces Application note 2021-04-14

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Models

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How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet