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Click here for more informationPRTR5V0U4Y
Integrated quad ultra-low capacitance ESD protection
The PRTR5V0U4Y is designed to protect Input/Output (I/O) ports that are sensitive to capacitive load, such as USB 2.0, Ethernet and DVI from destruction by ElectroStatic Discharge (ESD). It provides protection to downstream signal and supply components from ESD voltages as high as +-8 kV (contact discharge).
The PRTR5V0U4Y incorporates four pairs of ultra-low capacitance rail-to-rail diodes plus a Zener diode. The rail-to-rail diodes are connected to the Zener diode which allows ESD protection to be independent of supply voltage. The PRTR5V0U4Y is fabricated using thin film-on-silicon technology integrating four ultra-low capacitance rail-to-rail ESD protection diodes in a miniature 6-lead SOT363 package.
Features and benefits
- Pb-free and RoHS compliant
- ESD protection compliant to IEC 61000-4-2 level 4, +-8 kV contact discharge
- Four ultra-low input capacitance (1 pF typical) rail-to-rail ESD protection diodes
- Low-voltage clamping due to integrated Zener diode
- Small 6-lead SOT363 package
Applications
- General-purpose downstream ESD protection high frequency analog signals and high-speed serial data transmission for ports inside:
- Cellular and PCS mobile handsets
- PC-/notebook USB 2.0/IEEE 1394 ports
- DVI/HDMI interfaces
- Cordless telephones
- Wireless data (WAN/LAN) systems
- PDAs
Documentation (1)
File name | Title | Type | Date |
---|---|---|---|
Nexperia_document_brochure_ESD-Protection-Applications_022017 | ESD Protection Application guide | Brochure | 2018-12-21 |
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.