双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PSMN014-60LS

N-channel DFN3333-8 60 V 14 mΩ standard level MOSFET

Standard level N-channel MOSFET in DFN3333-8 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment.

This product has been discontinued

Features and benefits

  • High efficiency due to low switching and conduction losses
  • Small footprint for compact designs
  • Suitable for standard level gate drive sources

Applications

  • DC-to-DC converters
  • Lithium-ion battery protection
  • Load switching

Parametrics

Type number Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PSMN014-60LS SOT873-1 DFN3333-8 End of life N 1 60 14 150 40 4.5 19.6 65 36 3 N 1264 171 2010-09-02

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
PSMN014-60LS PSMN014-60LS,115
(934064652115)
Obsolete 01460 Wafer Batch Ref (last 5 figures) *YWW no package information

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
PSMN014-60LS PSMN014-60LS,115 PSMN014-60LS rohs rhf
Quality and reliability disclaimer

Documentation (14)

File name Title Type Date
PSMN014-60LS N-channel DFN3333-8 60 V 14 mΩ standard level MOSFET Data sheet 2011-12-08
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11160 Designing RC Snubbers Application note 2024-10-21
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
PSMN014-60LS PSMN014-60LS SPICE model SPICE model 2010-08-05
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09
PSMN014-60LS PSMN014-60LS Thermal model Thermal model 2010-08-02

Support

If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.

Models

File name Title Type Date
PSMN014-60LS PSMN014-60LS SPICE model SPICE model 2010-08-05
PSMN014-60LS PSMN014-60LS Thermal model Thermal model 2010-08-02

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.