双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PSMN3R9-60XS

N-channel 60 V, 4.0 mΩ standard level MOSFET in TO220F (SOT186A)

Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

This product has been discontinued

Features and benefits

  • High efficiency due to low switching and conduction losses
  • Isolated package
  • Suitable for standard level gate drive

Applications

  • AC-to-DC power supply equipment
  • Motor control
  • Server power supplies
  • Synchronous rectification

Parametrics

Type number Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PSMN3R9-60XS SOT186A TO-220F End of life N 1 60 4 175 75 34.7 103 55 53 3 N 5494 743 2013-09-11

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
PSMN3R9-60XS PSMN3R9-60XSQ
(934068135127)
Obsolete PSMN3R9 60XS P**XXYY AZ Batch No no package information

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
PSMN3R9-60XS PSMN3R9-60XSQ PSMN3R9-60XS rohs rhf
Quality and reliability disclaimer

Documentation (8)

File name Title Type Date
PSMN3R9-60XS N-channel 60 V, 4.0 mΩ standard level MOSFET in TO220F (SOT186A) Data sheet 2013-09-12
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
PSMN3R9-60XS PSMN3R9-60XS Spice model SPICE model 2013-10-01
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09
PSMN3R9-60XS PSMN3R9-60XS Thermal model Thermal model 2013-10-01

Support

If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.

Models

File name Title Type Date
PSMN3R9-60XS PSMN3R9-60XS Spice model SPICE model 2013-10-01
PSMN3R9-60XS PSMN3R9-60XS Thermal model Thermal model 2013-10-01

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.