双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PSMN4R3-100ES

N-channel 100 V 4.3 mΩ standard level MOSFET in I2PAK

Standard level N-channel MOSFET in a I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

This product has been discontinued

Features and benefits

  • High efficiency due to low switching and conduction losses
  • Robust construction for demanding applications
  • Standard level gate

Applications

  • DC-to-DC converters
  • Load switching
  • Motor control
  • Server power supplies

Parametrics

Type number Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PSMN4R3-100ES SOT226 I2PAK End of life N 1 100 4.3 175 120 49 170 338 235 3 N 9900 660 2011-10-17

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
PSMN4R3-100ES PSMN4R3-100ES,127
(934066116127)		 Obsolete SOT226
I2PAK
(SOT226) 		SOT226 Not available

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
PSMN4R3-100ES PSMN4R3-100ES,127 PSMN4R3-100ES rohs rhf
Quality and reliability disclaimer

Documentation (17)

File name Title Type Date
PSMN4R3-100ES N-channel 100 V, 4.3 mΩ standard level MOSFET in I2PAK Data sheet 2018-04-02
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11160 Designing RC Snubbers Application note 2024-10-21
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
SOT226 3D model for products with SOT226 package Design support 2017-06-30
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT226 plastic, single-ended package (I2PAK); 3 terminals; 2.54 mm pitch; 11 mm x 10 mm x 4.3 mm body Package information 2020-04-21
PSMN4R3-100ES PSMN4R3-100ES Spice model SPICE model 2011-11-10
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09
PSMN4R3-100ES PSMN4R3-100ES Thermal model Thermal model 2011-11-10

Support

If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.

Models

File name Title Type Date
PSMN4R3-100ES PSMN4R3-100ES Spice model SPICE model 2011-11-10
PSMN4R3-100ES PSMN4R3-100ES Thermal model Thermal model 2011-11-10
SOT226 3D model for products with SOT226 package Design support 2017-06-30

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet