双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PSMN8R5-100PSF

NextPower 100 V, 8.7 mΩ N-channel MOSFET in TO220 package

NextPower 100 V standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial & consumer applications.

This product has been discontinued

Features and benefits

  • Optimised for fast switching, low spiking, high efficiency
  • Low QG x RDSon FOM for high efficiency switching applications
  • Low body diode losses (Qrr) and fast recovery (trr)
  • Strong avalanche energy rating (EAS)
  • Avalanche rated & 100% tested
  • Ha-free & RoHS compliant TO220 package

Applications

  • Synchronous rectification in AC-to-DC and DC-to-DC applications
  • Brushed & BLDC motor control
  • UPS & solar inverter
  • LED lighting
  • Battery protection
  • Full-bridge & half-bridge applications
  • Flyback & resonant topologies

Parametrics

Type number Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PSMN8R5-100PSF SOT78 TO-220AB End of life N 1 100 8.7 175 98 8.7 44.5 183 70 3.1 N 3181 551 2017-03-23

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
PSMN8R5-100PSF PSMN8R5-100PSFQ
(934070402127)		 Obsolete SOT78
TO-220AB
(SOT78) 		SOT78 SOT78_127

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
PSMN8R5-100PSF PSMN8R5-100PSFQ PSMN8R5-100PSF rohs rhf
Quality and reliability disclaimer

Documentation (17)

File name Title Type Date
PSMN8R5-100PSF NextPower 100 V, 8.7 mΩ N-channel MOSFET in TO220 package Data sheet 2018-03-30
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11160 Designing RC Snubbers Application note 2024-10-21
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
AN90001 Designing in MOSFETs for safe and reliable gate-drive operation Application note 2024-10-28
AN11172 Mounting instructions for SOT78 (TO-220AB); SOT186A (TO-220F) Application note 2021-05-21
SOT78 3D model for products with SOT78 package Design support 2017-06-30
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT78 plastic, single-ended package (heatsink mounted, 1 mounting hole); 3 leads; 2.54 mm pitch; 15.6 mm x 10 mm x 4.4 mm body Package information 2020-04-21
PSMN8R5-100PSF SPICE mode PSMN8R5-100PSF SPICE model 2017-05-15
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09
PSMN8R5-100PSF_RCthermal PSMN8R5-100PSF thermal design Thermal design 2017-05-15
PSMN8R5-100PSF Flow thermal model PSMN8R5-100PSF Thermal model 2017-05-15

Support

If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.

Models

File name Title Type Date
PSMN8R5-100PSF SPICE mode PSMN8R5-100PSF SPICE model 2017-05-15
PSMN8R5-100PSF_RCthermal PSMN8R5-100PSF thermal design Thermal design 2017-05-15
PSMN8R5-100PSF Flow thermal model PSMN8R5-100PSF Thermal model 2017-05-15
SOT78 3D model for products with SOT78 package Design support 2017-06-30

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet