双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PXN4R6-30RLA

N-channel 30 V, 4.6 mOhm, logic level Trench MOSFET in MLPAK56

General purpose MOSFET for standard applications, 59 A, logic level N-channel enhancement mode Power MOSFET in MLPAK56 package.

This product has been discontinued

Features and benefits

  • Logic level compatibility

  • Trench MOSFET technology

  • Thermally efficient package in a small form factor (5.15 mm x 6.15 mm footprint)

Applications

  • Secondary side synchronous rectification

  • DC-to-DC converters

  • Battery Management System

  • Motor drive

  • Load switching

Parametrics

Type number Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) Ptot [max] (W) Automotive qualified Release date
PXN4R6-30RLA SOT8038-1 MLPAK56 End of life N 1 30 4.6 150 59 30 N 2023-10-18

Documentation (2)

File name Title Type Date
SOT8038-1 3D model for products with SOT8038-1 package Design support 2024-07-12
SOT8038-1 plastic thermal enhanced surface mounted package;mini leads; 8 terminals; pitch 1.27 mm; 6 x 5 x 1.0 mm body Package information 2024-07-11

Support

If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.

Models

File name Title Type Date
SOT8038-1 3D model for products with SOT8038-1 package Design support 2024-07-12

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet