双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

4 kW analogue bridgeless totem-pole PFC evaluation board

For this evaluation board, the PFC circuit has been implemented on a 4-layer PCB, with 2 oz copper for the outer layers and 1.5 oz copper for the inner layers. GAN039-650NTB devices by Nexperia are used for both the fast and slow switching legs. The inductor is made of a High Flux core with the inductance of 480 μH and a DC resistance of 0.025 Ω, designed to operate at 65 kHz. A simple 4 A rated high/low side driver IC (Si8273) with 0 V and 12 V as the on/off voltage levels directly drives each GaN FET. The control function is handled by a TI UCC28180 PFC controller.

4 kW analogue bridgeless totem-pole PFC evaluation board

Key features & benefits

By using a diode-free power GaN FET bridge with low reverse-recovery charge, very-high-efficiency single-phase AC-DC conversion is realized. In this circuit, the performance and efficiency improvement, is achieved by use of the GaN FETs in the fast-switching leg of the circuit. GaN FETs with low Qrr provide low loss hardswitching performance in this application.

Key applications

Products on the board (1)

Type number Description Status Quick access
GAN039-650NTB 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package Production

Related boards (5)

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Latest videos

Using Power GaN FETs in AC/DC converters - Quick Learning

Using Power GaN FETs in AC/DC converters - Quick Learning

Products on the board (1)

Type number Description Status Quick access
GAN039-650NTB 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package Production

Related boards (5)

Board Description Type Quick links Shop link
3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a top-side cooled CCPAK1212i package NX-HB-GAN039-TSCUL-top-side-cooled-half-bridge-evaluation-board 3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a top-side cooled CCPAK1212i package Evaluation board
Half-Bridge evaluation board featuring 35 mΩ GaN FETs in a TO-247 package (3.5 kW) NX-HB-GAN041UL-GAN041-650WSB-half-bridge-evaluation-board Half-Bridge evaluation board featuring 35 mΩ GaN FETs in a TO-247 package (3.5 kW) Evaluation board
Double pulse evaluation board featuring 33 mΩ GaN FETs in a top-side cooled CCPAK1212i package NX-DP-GAN039-TSC-Double-pulse-evaluation-board Double pulse evaluation board featuring 33 mΩ GaN FETs in a top-side cooled CCPAK1212i package Evaluation board
3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a bottom-side cooled CCPAK1212 package NX-HB-GAN039-BSCUL-bottom-side-cooled-half-bridge-evaluation-board 3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a bottom-side cooled CCPAK1212 package Evaluation board
NX-HB-GAN111UL half-bridge evaluation board nx-hb-gan111ul-half-bridge-evaluation-board NX-HB-GAN111UL half-bridge evaluation board Evaluation board

Documentation (2)

File name Title Type Date
GaNFET_evaluation_board_Terms_Of_Use GaN FET EVALUATION BOARD TERMS OF USE Other type 2023-10-10
UM90024 4 kW analogue bridgeless totem-pole PFC evaluation board User manual 2023-11-21