双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a bottom-side cooled CCPAK1212 package

The NX-HB-GAN039-BSCUL bottom-side cooled half-bridge evaluation board provides the elements of a simple buck or boost converter. This enables the basic study of the switching characteristics and efficiency achievable with Nexperia’s 650 V GaN FETs. The circuit can be configured for synchronous rectification, in either buck or boost mode. Selection jumpers allow the use of a single logic input or separate high side & low side logic inputs. The high-voltage input and output can operate at up to 400 V DC, with a power output of up to 3.5 KW or more, dependent upon cooling, ambient temperature and switching frequency. The inductor provided is intended for efficient operation at 100 kHz, however, other inductors and frequencies may be used. 

NX-HB-GAN039-BSCUL bottom-side cooled half-bridge evaluation board

Key features & benefits

The Gallium Nitride FET GAN039-650NBB (33 mΩ RDS(on) typ.) used in this evaluation board is a normally-off device, comprised of a high-voltage depletion-mode GaN HEMT (High Electron Mobility Transistor) combined with a tailored 30 V Si-FET in a cascode configuration.It is assembled as a die-on-die stack for best performance and minimized internal parasitics, housed in a 12 mm x 12 mm bottom-side cooled copper-clip package CCPAK. 

Key features of GAN039-650NBB include: 

  • Very low switching losses 
  • Rugged gate with high threshold voltage, Vth = 4 V, enables single supply gate drive voltage 0 V to 10 - 12 V. 
  • Very good QGD/QGS << 1 ratio, protects against parasitic turn-on 
  • Minimal reverse-recovery 
  • Very low Rth
  • Best in class third-quadrant off-state conduction performance for wide-bandgap devices 
  • Very low package inductance (≈1.3 nH @ 100 MHz)

Key applications

Products on the board (3)

Type number Description Status Quick access
GAN039-650NBB 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package Production
74LVC1G17GW Single Schmitt trigger buffer Production
74HCT1G86GW 2-input EXCLUSIVE-OR gate Production

Related boards (5)

Board Description Type Quick links Shop link
3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a top-side cooled CCPAK1212i package NX-HB-GAN039-TSCUL-top-side-cooled-half-bridge-evaluation-board 3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a top-side cooled CCPAK1212i package Evaluation board
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Products on the board (3)

Type number Description Status Quick access
GAN039-650NBB 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package Production
74LVC1G17GW Single Schmitt trigger buffer Production
74HCT1G86GW 2-input EXCLUSIVE-OR gate Production

Related boards (5)

Board Description Type Quick links Shop link
3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a top-side cooled CCPAK1212i package NX-HB-GAN039-TSCUL-top-side-cooled-half-bridge-evaluation-board 3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a top-side cooled CCPAK1212i package Evaluation board
Half-Bridge evaluation board featuring 35 mΩ GaN FETs in a TO-247 package (3.5 kW) NX-HB-GAN041UL-GAN041-650WSB-half-bridge-evaluation-board Half-Bridge evaluation board featuring 35 mΩ GaN FETs in a TO-247 package (3.5 kW) Evaluation board
Double pulse evaluation board featuring 33 mΩ GaN FETs in a top-side cooled CCPAK1212i package NX-DP-GAN039-TSC-Double-pulse-evaluation-board Double pulse evaluation board featuring 33 mΩ GaN FETs in a top-side cooled CCPAK1212i package Evaluation board
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NX-HB-GAN111UL half-bridge evaluation board nx-hb-gan111ul-half-bridge-evaluation-board NX-HB-GAN111UL half-bridge evaluation board Evaluation board

Documentation (2)

File name Title Type Date
GaNFET_evaluation_board_Terms_Of_Use GaN FET EVALUATION BOARD TERMS OF USE Other type 2023-10-10
UM90007 NX-HB-GAN039-BSCUL 3.5 kW half-bridge evaluation board with bottom-side cooled GaN FETs User manual 2024-08-21